PBSS4220V,115 NXP Semiconductors, PBSS4220V,115 Datasheet - Page 8

• Manufacturer Part Number: PBSS4220V,115
• Description: TRANS NPN 20V 2A LOW SAT SOT666
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS4220V,115

• Transistor Type: NPN
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 350mV @ 200mA, 2A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1A, 2V
• Power - Max: 900mW
• Frequency - Transition: 210MHz
• Mounting Type: Surface Mount
• Package / Case: SS Mini-6 (SOT-666)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059259115; PBSS4220V T/R; PBSS4220V T/R

NXP Semiconductors
8. Test information
PBSS4220V_2
Product data sheet
Fig 11. BISS transistor switching time definition
Fig 12. Test circuit for switching times
90 %
10 %
90 %
10 %
I
I
C
B
I
C
= 1 A; I
oscilloscope
Bon
t
d
= 50 mA; I
t
on
Rev. 02 — 11 December 2009
V
t
I
r
(probe)
450 Ω
Boff
= −50 mA; R1 = open; R2 = 45 Ω; R
R1
R2
R
B
V
BB
20 V, 2 A NPN low V
R
C
V
CC
DUT
V
o
mlb826
I
Bon
(probe)
450 Ω
I
t
(100 %)
Boff
s
B
t
off
= 145 Ω; R
oscilloscope
PBSS4220V
CEsat
C
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
= 10 Ω
t
f
I
006aaa003
C
(100 %)
t
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