2SD1525(F) Toshiba, 2SD1525(F) Datasheet

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2SD1525(F)

Manufacturer Part Number
2SD1525(F)
Description
TRANSISTOR NPN 100V 30A TO-3
Manufacturer
Toshiba
Datasheet

Specifications of 2SD1525(F)

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
30A
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
1.5V @ 200mA, 20A
Dc Current Gain (hfe) (min) @ Ic, Vce
1000 @ 20A, 5V
Power - Max
150W
Frequency - Transition
10MHz
Mounting Type
Through Hole
Package / Case
TO-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
High Current Switching Applications
Absolute Maximum Ratings
Equivalent Circuit
BASE
High collector current: I
High DC current gain: h
Monolithic construction with built-in base-emitter shunt resistor.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
Characteristics
≈ 2 kΩ
C
FE
= 30 A
= 1000 (min) (V
≈ 100 Ω
COLLECTOR
(Ta = 25°C)
Symbol
V
V
V
T
P
CBO
CEO
EBO
I
I
T
stg
C
B
EMITTER
C
2SD1525
j
CE
= 5 V, I
−55 to 150
Rating
100
100
150
150
30
5
5
1
C
= 20 A)
Unit
°C
°C
W
V
V
V
A
A
Weight: 9.75 g (typ.)
JEDEC
JEITA
TOSHIBA
2-21F1A
2009-08-06
2SD1525
Unit: mm

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2SD1525(F) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc) ...

Page 2

... Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. ...

Page 3

I – Common emitter 25° Collector-emitter voltage V ( ...

Page 4

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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