2SD1525(F) Toshiba, 2SD1525(F) Datasheet - Page 3

• Manufacturer Part Number: 2SD1525(F)
• Description: TRANSISTOR NPN 100V 30A TO-3
• Manufacturer: Toshiba

Specifications of 2SD1525(F)

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 30A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 200mA, 20A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 1000 @ 20A, 5V
• Power - Max: 150W
• Frequency - Transition: 10MHz
• Mounting Type: Through Hole
• Package / Case: TO-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

0.5
0.3
0.1
32
24
16
10
24
16
8
0
5
3
1
8
0
0.1
0
0
Common emitter
Tc = 25°C
25
0.3
100
Collector-emitter voltage V
2
Tc = 25°C
Base-emitter voltage V
0.8
Collector current I
Tc = −55°C
4
1
V
CE (sat)
I
I
C
C
100
1.6
– V
– V
3
6
CE
BE
−55
– I
I B = 1 mA
C
C
2.4
10
8
BE
CE
Common emitter
V CE = 5 V
Common emitter
I C /I B = 100
(A)
8
7
6
5
4
3
2
0
(V)
(V)
30
10
3.2
100
12
3
10000
5000
3000
1000
500
300
100
0.5
0.3
0.5
0.3
0.1
10
50
30
10
0.1
5
3
1
0.1
5
3
1
2
*: Single nonrepetitive pulse
Curves must be derated linearly
with increase in temperature.
I C max (pulsed)*
25
Tc = 25°C
I C max
(continuous)
Tc = 100°C
0.3
0.3
Collector-emitter voltage V
5
100
DC operation
Tc = 25°C
Collector current I
Collector current I
Safe Operating Area
Tc = −55°C
10
25
1
1
−55
V
BE (sat)
h
FE
3
3
– I
30
– I
C
C
C
C
10
10
Common emitter
V CE = 5 V
Common emitter
I C /I B = 100
(A)
(A)
CE
0.5 ms*
100
V CEO max
(V)
30
30
1 ms*
3 ms*
10 ms*
2009-08-06
2SD1525
100
100
300