MT48LC4M32B2B5-7 IT:G Micron Technology Inc, MT48LC4M32B2B5-7 IT:G Datasheet - Page 29

• Manufacturer Part Number: MT48LC4M32B2B5-7 IT:G
• Description: DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC4M32B2B5-7 IT:G

• Density: 128 Mb
• Maximum Clock Rate: 143 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 17|8|5.5 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 128M (4Mx32)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Package / Case: 90-VFBGA
• Organization: 4Mx32
• Address Bus: 14b
• Access Time (max): 17/8/5.5ns
• Operating Supply Voltage (typ): 3.3V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 175mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 17:
Figure 18:
Figure 19:
PDF: 09005aef80872800/Source: 09005aef80863355
128MbSDRAMx32_2.fm - Rev. L 1/09 EN
WRITE Burst
WRITE-to-WRITE
Random WRITE Cycles
Notes:
Notes:
Notes:
COMMAND
1. BL = 2. DQM is LOW.
COMMAND
1. DQM is LOW. Each WRITE command may be to any bank.
COMMAND
1. Each WRITE command may be to any bank. DQM is LOW.
ADDRESS
ADDRESS
ADDRESS
CLK
CLK
CLK
DQ
DQ
DQ
WRITE
BANK,
COL n
WRITE
BANK,
BANK,
WRITE
COL n
COL n
T0
D
D
T0
D
n
T0
n
IN
IN
n
IN
WRITE
NOP
n + 1
BANK,
n + 1
COL a
T1
NOP
D
T1
D
T1
D
IN
a
IN
IN
DON’T CARE
WRITE
BANK,
WRITE
BANK,
NOP
COL b
COL x
T2
T2
D
D
T2
b
x
IN
IN
29
DON’T CARE
DON’T CARE
WRITE
BANK,
COL m
T3
NOP
T3
D
m
IN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001 Micron Technology, Inc. All rights reserved.
128Mb: x32 SDRAM
Register Definition