MT48LC4M32B2B5-7 IT:G Micron Technology Inc, MT48LC4M32B2B5-7 IT:G Datasheet - Page 42

• Manufacturer Part Number: MT48LC4M32B2B5-7 IT:G
• Description: DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC4M32B2B5-7 IT:G

• Density: 128 Mb
• Maximum Clock Rate: 143 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 17|8|5.5 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 128M (4Mx32)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Package / Case: 90-VFBGA
• Organization: 4Mx32
• Address Bus: 14b
• Access Time (max): 17/8/5.5ns
• Operating Supply Voltage (typ): 3.3V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 175mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Specifications
Table 12:
Temperature and Thermal Impedance
PDF: 09005aef80872800/Source: 09005aef80863355
128MbSDRAMx32_2.fm - Rev. L 1/09 EN
Parameter
Voltage on V
Voltage on inputs, NC or I/O pins relative to V
Operating temperature,
T
T
T
Storage temperature (plastic)
Power dissipation
A
A
A
(Commercial)
(Industrial)
(Automotive)
DD
Absolute Maximum Ratings
, V
DD
Q supply relative to V
Stresses greater than those listed Table 12 may cause permanent damage to the device.
This is a stress rating only, and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
It is imperative that the SDRAM device’s temperature specifications, shown in Table 13
on page 43, be maintained in order to ensure the junction temperature is in the proper
operating range to meet data sheet specifications. An important step in maintaining the
proper junction temperature is using the device’s thermal impedances correctly. The
thermal impedances are listed in Table 14 on page 43 for the applicable die revision and
packages being made available. These thermal impedance values vary according to the
density, package, and particular design used for each device.
Incorrectly using thermal impedances can produce significant errors. Read Micron tech-
nical note TN-00-08, “Thermal Applications” prior to using the thermal impedances
listed in Table 14. To ensure the compatibility of current and future designs, contact
Micron Applications Engineering to confirm thermal impedance values.
The SDRAM device’s safe junction temperature range can be maintained when the T
specification is not exceeded. In applications where the device's ambient temperature is
too high, use of forced air and/or heat sinks may be required in order to satisfy the case
temperature specifications.
SS
SS
42
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications
Min
–40
–40
–55
–1
–1
0
©2001 Micron Technology, Inc. All rights reserved.
128Mb: x32 SDRAM
1
+105
+150
Max
+4.6
+4.6
+70
+85
Units
°C
°C
W
V
V
C