MT48LC4M32B2B5-7 IT:G Micron Technology Inc, MT48LC4M32B2B5-7 IT:G Datasheet - Page 43

• Manufacturer Part Number: MT48LC4M32B2B5-7 IT:G
• Description: DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC4M32B2B5-7 IT:G

• Density: 128 Mb
• Maximum Clock Rate: 143 MHz
• Package: 90VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 17|8|5.5 ns
• Operating Temperature: -40 to 85 °C
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 128M (4Mx32)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Package / Case: 90-VFBGA
• Organization: 4Mx32
• Address Bus: 14b
• Access Time (max): 17/8/5.5ns
• Operating Supply Voltage (typ): 3.3V
• Package Type: VFBGA
• Operating Temp Range: -40C to 85C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 175mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 13:
Table 14:
PDF: 09005aef80872800/Source: 09005aef80863355
128MbSDRAMx32_2.fm - Rev. L 1/09 EN
Parameter
Die Revision
Operating case temperature:
Commercial
Automotive
Junction temperature:
Commercial
Industrial
Automotive
Ambient temperature:
Commercial
Industrial
Automotive
Peak reflow temperature
G
Industrial
Temperature Limits
Thermal Impedance Simulated Values
Package
Notes:
Notes:
90-ball
VFBGA
86-pin
TSOP
1. MAX operating case temperature, T
2. Device functionality is not guaranteed if the device exceeds maximum T
3. All temperature specifications must be satisfied
4. The case temperature should be measured by gluing a thermocouple to the top center of
5. Operating ambient temperature surrounding the package.
1. For designs expected to last beyond the die revision listed, contact Micron Applications
2. Thermal resistance data is sampled from multiple lots and the values should be viewed as
3. These are estimates; actual results may vary.
Substrate
side of the device, as shown in Figures 31 and 32 on page 44.
the component. This should be done with a 1mm bead of conductive epoxy, as defined by
the JEDEC EIA/JESD51 standards. Care should be taken to ensure the thermocouple bead is
touching the case.
Engineering to confirm thermal impedance values.
typical.
2-layer
4-layer
2-layer
4-layer
θ JA (°C/W)
Airflow =
0m/s
82.2
64.6
48.2
55
43
θ JA (°C/W)
Airflow =
1m/s
47.2
50.8
41.1
65
Symbol
C
, is measured in the center of the package on the top
T
PEAK
T
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T
T
A
C
J
θ JA (°C/W)
Airflow =
2m/s
Min
59.7
45.1
45.3
38.1
–40
–40
–40
–40
–40
–40
0
0
0
–
Electrical Specifications
Max
105
110
105
260
80
90
85
95
70
85
θ JB (°C/W)
©2001 Micron Technology, Inc. All rights reserved.
128Mb: x32 SDRAM
49.4
40.6
37.5
32.1
Units
C
°C
°C
°C
°C
during operation.
θ JC (°C/W)
10.3
1, 2, 3, 4
1.8
Notes
3, 5
3