MMBT4401_D87Z Fairchild Semiconductor, MMBT4401_D87Z Datasheet

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MMBT4401_D87Z

Manufacturer Part Number
MMBT4401_D87Z
Description
TRANS GP NPN 40V 600MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of MMBT4401_D87Z

Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
750mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 1V
Power - Max
350mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.6 A
Maximum Dc Collector Current
0.6 A
Power Dissipation
350 mW
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
100
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
2001 Fairchild Semiconductor Corporation
P
R
R
V
V
V
I
T
Symbol
Symbol
C
D
J
CEO
CBO
EBO
Absolute Maximum Ratings*
*
*
NPN General Pupose Amplifier
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
JC
JA
This device is designed for use as a medium power amplifier and
switch requiring collector currents up to 500 mA.
, T
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
stg
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
C
B
Derate above 25 C
E
2N4401
Characteristic
TO-92
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
MMBT4401
SOT-23
Mark: 2X
2N4401
83.3
C
625
200
5.0
Max
-55 to +150
B
Value
*MMBT4401
6.0
600
40
60
350
357
2.8
E
2N4401/MMBT4401, Rev A
Units
mW/ C
Units
mA
mW
C/W
C/W
V
V
V
C

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MMBT4401_D87Z Summary of contents

Page 1

... Total Device Dissipation D Derate above 25 C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient JA * Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation MMBT4401 C SOT-23 Mark 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted 2N4401 625 5.0 83 ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Base Cutoff Current BL I Collector Cutoff Current CEX ON CHARACTERISTICS Current Gain FE Collector-Emitter Saturation ...

Page 3

Typical Characteristics Typical Pulsed Current Gain vs Collector Current 500 400 125 °C 300 200 25 °C 100 - 40 °C 0 0.1 0 COLLECTOR CURRENT (mA) C Base-Emitter Saturation Voltage vs Collector Current ...

Page 4

Typical Characteristics Turn On and Turn Off Times vs Collector Current 400 320 240 160 100 I - COLLECTOR CURRENT (mA) ...

Page 5

Typical Common Emitter Characteristics Common Emitter Characteristics COLLECTOR CURRENT ...

Page 6

Test Circuits 0 200ns FIGURE 1: Saturated Turn-On Switching Timer NOTE 5.0 V EBO 0 200ns FIGURE 2: Saturated Turn-Off Switching Time NPN General Purpose Amplifier 1.0 K 500 - 1 ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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