PN2222A_J05Z Fairchild Semiconductor, PN2222A_J05Z Datasheet - Page 2

• Manufacturer Part Number: PN2222A_J05Z
• Description: TRANS GP NPN 40V 1A TO-92
• Manufacturer: Fairchild Semiconductor

Specifications of PN2222A_J05Z

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 625mW
• Frequency - Transition: 300MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

PN2222A / MMBT2222A / PZT2222A Rev. A3
© 2010 Fairchild Semiconductor Corporation
Electrical Characteristics
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Off Characteristics
On Characteristics
Small Signal Characteristics
Switching Characteristics
BV
BV
BV
Symbol
V
V
Re(h
rb’C
(BR)CEO
(BR)CBO
(BR)EBO
I
I
CE(sat)
BE(sat)
C
I
C
h
CBO
CEX
EBO
NF
I
BL
f
t
obo
t
FE
t
t
ibo
T
d
s
r
f
ie
c
)
Collector-Emitter Breakdown Voltage * I
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Collector Base Time Constant
Noise Figure
Real Part of Common-Emitter
High Frequency Input Impedance
Delay Time
Rise Time
Storage Time
Fall Time
Parameter
T
a
= 25°C unless otherwise noted
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
V
I
I
R
I
V
I
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
C
B1
CE
CB
CB
EB
CE
CB
EB
CC
CC
S
= 10mA, I
= 10μA, I
= 10μA, I
= 0.1mA, V
= 1.0mA, V
= 10mA, V
= 10mA, V
= 150mA, V
= 150mA, V
= 500mA, V
= 150mA, I
= 500mA, I
= 150mA, I
= 500mA, I
= 20mA, V
= 20mA, V
= 100μA, V
= 20mA, V
= 150mA, I
= 1.0KΩ, f = 1.0KHz
= I
2
= 3.0V, I
= 0.5V, I
= 60V, V
= 60V, I
= 60V, I
= 60V, V
= 10V, I
= 30V, V
= 30V, I
B2
= 15mA
Test Condition
C
E
B
E
E
E
C
C
C
EB(off)
EB(off)
CE
CE
CE
CB
CE
EB(off)
= 0
= 0
B
B
B
B
B1
CE
CE
CE
= 0
= 0
= 0, T
= 0, f = 1MHz
CE
CE
CE
= 150mA,
= 0
= 0, f = 1MHz
= 15mA
= 50mA
= 15mA
= 50mA
= 10V
= 10V, T
= 20V, f = 100MHz
= 20V, f = 31.8MHz
= 20V, f = 300MHz
= 15mA
= 10V
= 10V
= 10V,
= 10V *
= 1V *
= 10V *
= 3.0V
= 3.0V
= 0.5V,
a
= 125°C
a
= -55°C
Min.
100
300
6.0
0.6
40
75
35
50
75
35
50
40
Max.
0.01
300
150
225
0.3
1.0
1.2
2.0
8.0
4.0
10
10
10
20
25
60
10
25
60
www.fairchildsemi.com
Units
MHz
nA
μA
μA
nA
nA
pF
pF
pS
dB
ns
ns
ns
ns
V
V
V
V
V
V
V
Ω