PDTC123YS,126 NXP Semiconductors, PDTC123YS,126 Datasheet - Page 7

• Manufacturer Part Number: PDTC123YS,126
• Description: TRANS NPN W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PDTC123YS,126

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058786126; PDTC123YS AMO; PDTC123YS AMO

NXP Semiconductors
8. Package outline
PDTC123Y_SER_4
Product data sheet
Fig 5.
Fig 7.
Fig 9.
1.75
1.45
4.2
3.6
4.8
4.4
Dimensions in mm
Dimensions in mm
Dimensions in mm
0.9
0.7
0.30
0.22
0.30
0.22
0.20
0.12
Package outline SOT416 (SC-75)
Package outline SOT883 (SC-101)
Package outline SOT54A
5.2
5.0
1
2
0.62
0.55
0.55
0.47
0.35
3
1.8
1.4
3 max
1
1
3
0.65
14.5
12.7
2
0.30
0.15
0.45
0.15
0.50
0.46
1
2
3
0.48
0.40
Rev. 04 — 16 November 2009
0.95
0.60
0.25
0.10
2.54
0.45
0.38
1.02
0.95
04-11-04
03-04-03
04-06-28
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
5.08
Fig 6.
Fig 8.
Fig 10. Package outline SOT54 variant
3.0
2.5
4.2
3.6
4.8
4.4
4.2
3.6
4.8
4.4
Dimensions in mm
Dimensions in mm
Dimensions in mm
1.7
1.3
Package outline SOT346 (SC-59A/TO-236)
Package outline SOT54 (SC-43A/TO-92)
1
5.2
5.0
5.2
5.0
PDTC123Y series
1.9
3.1
2.7
max
2.5
3
14.5
12.7
14.5
12.7
2
0.50
0.35
© NXP B.V. 2009. All rights reserved.
0.6
0.2
1
2
3
1
2
3
0.45
0.38
0.48
0.40
0.48
0.40
1.27
1.27
0.26
0.10
0.45
0.38
1.3
1.0
1.27
04-11-11
04-11-16
05-01-10
2.54
2.54
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