PDTC123YS,126 NXP Semiconductors, PDTC123YS,126 Datasheet - Page 8

• Manufacturer Part Number: PDTC123YS,126
• Description: TRANS NPN W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PDTC123YS,126

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058786126; PDTC123YS AMO; PDTC123YS AMO

NXP Semiconductors
9. Packing information
Table 9.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
PDTC123Y_SER_4
Product data sheet
Type number
PDTC123YE
PDTC123YK
PDTC123YM
PDTC123YS
PDTC123YT
PDTC123YU
Fig 11. Package outline SOT23 (TO-236AB)
2.5
2.1
For further information and the availability of packing methods, see
Dimensions in mm
1.4
1.2
Packing methods
1
Package
SOT416
SOT346
SOT883
SOT54
SOT54A
SOT54 variant
SOT23
SOT323
3.0
2.8
1.9
3
2
0.48
0.38
Description
tape ammopack, wide pitch
bulk, delta pinning
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
2 mm pitch, 8 mm tape and reel
bulk, straight leads
tape and reel, wide pitch
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
0.45
0.15
Rev. 04 — 16 November 2009
1.1
0.9
0.15
0.09
04-11-04
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Fig 12. Package outline SOT323 (SC-70)
Section
2.2
2.0
Dimensions in mm
[1]
1.35
1.15
12.
1
PDTC123Y series
Packing quantity
3000
-115
-115
-
-
-
-
-
-215
-115
1.3
2.2
1.8
3
2
5000
-
-
-
-412
-
-
-112
-
-
0.4
0.3
0.45
0.15
© NXP B.V. 2009. All rights reserved.
10000
-135
-135
-315
-
-116
-126
-
-235
-135
1.1
0.8
0.25
0.10
04-11-04
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