PDTC123YS,126 NXP Semiconductors, PDTC123YS,126 Datasheet - Page 9

• Manufacturer Part Number: PDTC123YS,126
• Description: TRANS NPN W/RES 50V TO-92
• Manufacturer: NXP Semiconductors

Specifications of PDTC123YS,126

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 500mW
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934058786126; PDTC123YS AMO; PDTC123YS AMO

NXP Semiconductors
10. Revision history
Table 10.
PDTC123Y_SER_4
Product data sheet
Document ID
PDTC123Y_SER_4
Modifications:
PDTC123Y_SER_3
PDTC123YT_2
PDTC123YT_1
Revision history
Release date
20091116
20050324
20040510
20040406
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Rev. 04 — 16 November 2009
Data sheet status
Product data sheet
Product data sheet
Objective data sheet
Objective data sheet
NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
Change notice
-
-
-
-
PDTC123Y series
Supersedes
PDTC123Y_SER_3
PDTC123YT_2
PDTC123YT_1
-
© NXP B.V. 2009. All rights reserved.
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