TPCP8J01(TE85L,F) Toshiba, TPCP8J01(TE85L,F) Datasheet
TPCP8J01(TE85L,F)
Specifications of TPCP8J01(TE85L,F)
Related parts for TPCP8J01(TE85L,F)
TPCP8J01(TE85L,F) Summary of contents
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... TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type Notebook PC Applications Portable Equipment Applications • Lead(Pb)-Free • Small mounting area due to small and thin package • Low drain-source ON resistance: P Channel R • High forward transfer admittance: P Channel |Y • ...
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... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...
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Electrical Characteristics MOSFET Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time ...
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BRT Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Input voltage (ON) Input voltage (OFF) Transition frequency Collector output capacitance Input resistor Resistor ratio Symbol Test Condition ...
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MOSFET I – −5 −10 −2. Common source −2 25°C −4.5 −3 −2.6 Pulse test −4 −3.5 −3 −2 − −2.1V 0 −0.2 −0.4 −0.6 0 Drain-source voltage – ...
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R – (ON) 80 Common source Pulse test −5.5A 60 −2. −5.5A 40 −2. − − −80 − 120 ...
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Device mounted on a glass-epoxy board (b) (Note 2b) 100 10 1 0.1 0.001 0.01 Safe operating area 100 I D max (pulsed ms* 10 ms* 1 *:Single pulse Ta = 25°C Curves must be derated linearly ...
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BRT 8 TPCP8J01 2006-11-17 ...
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TPCP8J01 2006-11-17 ...