TPCP8J01(TE85L,F) Toshiba, TPCP8J01(TE85L,F) Datasheet - Page 6

• Manufacturer Part Number: TPCP8J01(TE85L,F)
• Description: MOSFET N/P-CH 32V 2-3V1G
• Manufacturer: Toshiba

Specifications of TPCP8J01(TE85L,F)

• Transistor Type: NPN Pre-Biased, P-Channel Pre-Biased
• Applications: General Purpose
• Voltage - Rated: 50V NPN, 32V P-Channel
• Current Rating: 100mA PNP, 5.5A P-Channel
• Mounting Type: Surface Mount
• Package / Case: 8-WSSOP (0.094", 2.40mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
100
2.5
1.5
0.5
80
60
40
20
10
0
−0.1
−80
1
2
1
0
0
(1) t = 5 s
(2) t = 5 s
(1) DC
(2) DC
Common source
Pulse test
V GS = −10 V
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
V GS = −4 V
−40
Drain-source voltage V DS (V)
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
40
Capacitance – V
−1
0
R
DS (ON)
(1) Device mounted on a
(2) Device mounted on a
P
D
glass-epoxy board(a) (Note 2a)
glass-epoxy board (b) (Note 2b)
80
40
– Ta
– Ta
−2.7A
−2.7A
−10
80
DS
120
I D = −5.5A
C oss
C iss
C rss
I D = −5.5A
120
−1.3A
−1.3A
−100
160
160
6
−100
−40
−30
−20
−10
−10
−1
−4
−3
−2
−1
−80
0
0
0
0
Common source
Ta = 25°C
Pulse test
Common source
I D = −5.5 A
Ta = 25°C
Pulse test
−10
V DS
−40
−3
−10
−2
0.4
Drain-source voltage V DS (V)
Ambient temperature Ta (°C)
−1
Total gate charge Q g (nC)
Dynamic input/output
0
characteristics
−20
0.8
I
DR
V
−6
V GS = 0 V
V GS
th
−4.5
– V
40
– Ta
DS
−30
1.2
80
Common source
V DS = −10 V
I D = −1 mA
Pulse test
−12
V DD = −24 V
TPCP8J01
−40
1.6
120
2006-11-17
−50
160
2
−16
−12
−8
−4
0