S29AS008J70BFI030 Spansion Inc., S29AS008J70BFI030 Datasheet - Page 15

• Manufacturer Part Number: S29AS008J70BFI030
• Description: IC 8M FLASH MEMORY
• Manufacturer: Spansion Inc.

Specifications of S29AS008J70BFI030

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Boot Type: Bottom/Top
• Address Bus: 20/19Bit
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: FBGA
• Program/erase Volt (typ): 1.65 to 1.95V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.65V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8/16Bit
• Number Of Words: 1M/512K
• Supply Current: 12mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

7.3
7.4
7.5
7.6
July 16, 2009 S29AS008J_00_08
Writing Commands/Command Sequences
Program and Erase Operation Status
Standby Mode
Automatic Sleep Mode
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and CE# to V
For program operations, the BYTE# pin determines whether the device accepts program data in bytes or
words. See
The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four.
Byte Program Command Sequence on page 29
standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device.
Table 7.4 on page 18
the address bits required to uniquely select a sector. The
erasing a sector or the entire chip, or suspending/resuming the erase operation.
After the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in this mode. Refer to
Autoselect Command Sequence on page 28
I
Characteristics on page 43
During an erase or program operation, the system may check the status of the operation by reading the
status bits on DQ7–DQ0. Standard read cycle timings and I
Operation Status on page 35
When the system is not reading or writing to the device, it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state,
independent of the OE# input.
The device enters the CMOS standby mode when the CE# and RESET# pins are both held at V
(Note that this is a more restricted voltage range than V
V
requires standard access time (t
before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the operation
is completed.
I
on page
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables
this mode when addresses remain stable for t
CE#, WE#, and OE# control signals. Standard address access timings provide new data when addresses are
changed. While in sleep mode, output data is latched and always available to the system. I
Characteristics on page 41
CC2
CC3
CC
± 0.2 V, the device will be in the standby mode, but the standby current will be greater. The device
and I
in
DC Characteristics on page 41
41.
CC4
Word/Byte Configuration on page 14
represents the standby current specification shown in the table in
indicate the address space that each sector occupies. A “sector address” consists of
D a t a
contains timing specification tables and timing diagrams for write operations.
represents the automatic sleep mode current specification.
for more information, and to
CE
) for read access when the device is in either of these standby modes,
S h e e t
represents the active current specification for the write mode.
S29AS008J
for more information.
ACC
has details on programming data to the device using both
for more information.
+ 30 ns. The automatic sleep mode is independent of the
IH
.) If CE# and RESET# are held at V
Command Definitions on page 28
AC Characteristics on page 43
CC
IL
read specifications apply. Refer to
, and OE# to V
Autoselect Mode on page 16
IH
DC Characteristics
Table 7.3 on page 17
.
for timing diagrams.
CC5
has details on
IH
, but not within
in the
CC
Write
± 0.2 V.
Word/
AC
DC
and
and
15