S29AS008J70BFI030 Spansion Inc., S29AS008J70BFI030 Datasheet - Page 47

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S29AS008J70BFI030

Manufacturer Part Number
S29AS008J70BFI030
Description
IC 8M FLASH MEMORY
Manufacturer
Spansion Inc.
Datasheet

Specifications of S29AS008J70BFI030

Cell Type
NOR
Density
8Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Bottom/Top
Address Bus
20/19Bit
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
FBGA
Program/erase Volt (typ)
1.65 to 1.95V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.65V
Operating Supply Voltage (max)
1.95V
Word Size
8/16Bit
Number Of Words
1M/512K
Supply Current
12mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant
July 16, 2009 S29AS008J_00_08
Notes
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see
2. Illustration shows device in word mode.
Note
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.
Addresses
DQ0–DQ6
RY/BY#
Addresses
WE#
DQ7
OE#
RY/BY#
CE#
WE#
Data
CE#
OE#
V
CC
t
t
BUSY
t
CH
VCS
Figure 18.7 Data# Polling Timings (During Embedded Algorithms)
t
OEH
D a t a
t
Erase Command Sequence (last two cycles)
CS
2AAh
t
t
Figure 18.6 Chip/Sector Erase Operation Timings
WC
ACC
t
CE
t
VA
t
RC
OE
t
WP
t
DS
55h
S h e e t
Complement
Status Data
t
t
DH
CH
S29AS008J
555h for chip erase
t
OH
t
WPH
t
DF
t
AS
SA
10 for Chip Erase
t
AH
VA
Complement
Status Data
30h
t
BUSY
True
Write Operation Status on page
True
t
WHWH2
Read Status Data
VA
Progress
VA
In
Valid Data
Valid Data
VA
Complete
35).
t
RB
High Z
High Z
47

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