S29AS008J70BFI030 Spansion Inc., S29AS008J70BFI030 Datasheet - Page 3

• Manufacturer Part Number: S29AS008J70BFI030
• Description: IC 8M FLASH MEMORY
• Manufacturer: Spansion Inc.

Specifications of S29AS008J70BFI030

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 70ns
• Interface Type: Parallel
• Boot Type: Bottom/Top
• Address Bus: 20/19Bit
• Operating Supply Voltage (typ): 1.8V
• Operating Temp Range: -40C to 85C
• Package Type: FBGA
• Program/erase Volt (typ): 1.65 to 1.95V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 1.65V
• Operating Supply Voltage (max): 1.95V
• Word Size: 8/16Bit
• Number Of Words: 1M/512K
• Supply Current: 12mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Distinctive Characteristics
This document states the current technical specifications regarding the Spansion product(s) described herein. Spansion Inc. deems the products to have been in sufficient pro-
duction volume such that subsequent versions of this document are not expected to change. However, typographical or specification corrections, or modifications to the valid com-
binations offered may occur.
Architectural Advantages
Performance Characteristics
S29AS008J
8 Megabit (1M x 8-Bit / 512K x 16-Bit)
CMOS 1.8 Volt-only Boot Sector Flash Memory
Data Sheet
Single Power Supply Operation
– Full voltage range: 1.65 to 1.95 volt read and write operations for
Manufactured on 110 nm Process Technology
Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification
– May be programmed and locked at the factory or by the customer
Flexible Sector Architecture
– Eight 8 Kbyte and fifteen 64 Kbyte sectors (byte mode)
– Eight 4 Kword, and fifteen 32 Kword sectors (word mode)
Sector Group Protection Features
– A hardware method of locking a sector to prevent any program or
– Sectors can be locked in-system or via programming equipment
– Temporary Sector Group Unprotect feature allows code changes in
Unlock Bypass Program Command
– Reduces overall programming time when issuing multiple program
Top or Bottom Boot Block Configurations Available
Compatibility with JEDEC standards
– Pinout and software compatible with single-power supply Flash
– Superior inadvertent write protection
High Performance
– Access times as fast as 70 ns
– Industrial temperature range (-40°C to +85°C)
– Word programming time as fast as 6 µs (typical)
battery-powered applications
through an 8-word/16-byte random Electronic Serial Number,
accessible through a command sequence
erase operations within that sector
previously locked sectors
command sequences
Publication Number S29AS008J_00
Revision 08
Package Options
Software Features
Hardware Features
Ultra Low Power Consumption (typical values at 5 MHz)
– 15 µA Automatic Sleep mode current
– 8 µA standby mode current
– 8 mA read current
– 20 mA program/erase current
Cycling Endurance: 1,000,000 cycles per sector typical
Data Retention: 20 years typical
48-ball BGA
48-pin TSOP
CFI (Common Flash Interface) Compliant
– Provides device-specific information to the system, allowing host
Erase Suspend/Erase Resume
– Suspends an erase operation to read data from, or program data to,
Data# Polling and Toggle Bits
– Provides a software method of detecting program or erase operation
Ready/Busy# Pin (RY/BY#)
– Provides a hardware method of detecting program or erase cycle
Hardware Reset Pin (RESET#)
– Hardware method to reset the device to reading array data
WP# input pin
– Write protect (WP#) function allows protection of two outermost
software to easily reconfigure for different Flash devices
a sector that is not being erased, then resumes the erase operation
completion
completion
boot sectors (boot sector models only), regardless of sector group
protect status
Issue Date July 16, 2009