S29AS008J70BFI030 Spansion Inc., S29AS008J70BFI030 Datasheet - Page 32

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S29AS008J70BFI030

Manufacturer Part Number
S29AS008J70BFI030
Description
IC 8M FLASH MEMORY
Manufacturer
Spansion Inc.
Datasheet

Specifications of S29AS008J70BFI030

Cell Type
NOR
Density
8Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Bottom/Top
Address Bus
20/19Bit
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
FBGA
Program/erase Volt (typ)
1.65 to 1.95V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.65V
Operating Supply Voltage (max)
1.95V
Word Size
8/16Bit
Number Of Words
1M/512K
Supply Current
12mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant
32
The system may also write the autoselect command sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes even at addresses within erasing sectors, since the codes
are not stored in the memory array. When the device exits the autoselect mode, the device reverts to the
Erase Suspend mode, and is ready for another valid operation. See
on page 28
The system must write the Erase Resume command (address bits are don’t care) to exit the erase suspend
mode and continue the sector erase operation. Further writes of the Resume command are ignored. Another
Erase Suspend command can be written after the device has resumed erasing.
Notes
1. See
2. See
Table 11.1 on page 33
DQ3: Sector Erase Timer on page 39
for more information.
for erase command sequence.
for more information.
No
Figure 10.2 Erase Operation
S29AS008J
Command Sequence
Erasure Completed
Write Erase
from System
Data = FFh?
D a t a
Data Poll
START
Yes
S h e e t
Embedded
Erase
algorithm
in progress
Autoselect Command Sequence
S29AS008J_00_08 July 16, 2009

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