S29AS008J70BFI030 Spansion Inc., S29AS008J70BFI030 Datasheet - Page 30

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S29AS008J70BFI030

Manufacturer Part Number
S29AS008J70BFI030
Description
IC 8M FLASH MEMORY
Manufacturer
Spansion Inc.
Datasheet

Specifications of S29AS008J70BFI030

Cell Type
NOR
Density
8Mb
Access Time (max)
70ns
Interface Type
Parallel
Boot Type
Bottom/Top
Address Bus
20/19Bit
Operating Supply Voltage (typ)
1.8V
Operating Temp Range
-40C to 85C
Package Type
FBGA
Program/erase Volt (typ)
1.65 to 1.95V
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
1.65V
Operating Supply Voltage (max)
1.95V
Word Size
8/16Bit
Number Of Words
1M/512K
Supply Current
12mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant
10.7
30
Chip Erase Command Sequence
Note
See
Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical erase. The system is not required to provide any
controls or timings during these operations.
for the chip erase command sequence.
Any commands written to the chip during the Embedded Erase algorithm are ignored. Note that a hardware
reset during the chip erase operation immediately terminates the operation. The Chip Erase command
sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity.
The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. See
Operation Status on page 35
complete, the device returns to reading array data and addresses are no longer latched.
Figure 10.2 on page 32
on page 46
Table 11.1 on page 33
for parameters, and
for program command sequence.
illustrates the algorithm for the erase operation. See
for information on these status bits. When the Embedded Erase algorithm is
Increment Address
Figure 18.6 on page 47
Figure 10.1 Program Operation
S29AS008J
in progress
Table 11.1 on page 33
Embedded
algorithm
D a t a
Program
No
S h e e t
for timing diagrams.
Command Sequence
Write Program
Last Address?
Programming
from System
Verify Data?
Completed
Data Poll
START
Yes
Yes
shows the address and data requirements
No
Erase/Program Operations
S29AS008J_00_08 July 16, 2009
Write

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