TDA6108JF NXP Semiconductors, TDA6108JF Datasheet - Page 5

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TDA6108JF

Manufacturer Part Number
TDA6108JF
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of TDA6108JF

Power Supply Requirement
Single
Mounting
Through Hole
Lead Free Status / RoHS Status
Not Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
TDA6108JF
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Company:
Part Number:
TDA6108JF
Quantity:
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Part Number:
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Philips Semiconductors
CHARACTERISTICS
Operating range: T
V
(measured in test circuit of Fig.8); unless otherwise specified.
1999 Oct 29
I
V
R
G
V
I
I
V
V
B
B
t
q
o(m)(offset)
o(c)(max)
Pco
o(c1)
G
V
V
V
I
ref(int)
O(c)
o(c)(min)
o(c)(max)
S
L
i
Triple video output amplifier
SYMBOL
o(m)
O(c)(offset)
o(c)(T)
o(c)(T)(offset)
= V
/ I
o(c)
o(c2)
= V
quiescent supply current
internal reference voltage
(input stage)
input resistance
gain of amplifier
gain difference
nominal output voltage at
pins 7, 8 and 9 (DC value)
differential nominal output
offset voltage between
pins 7 and 8, 8 and 9 and
9 and 7 (DC value)
output voltage temperature
drift at pins 7, 8 and 9
differential output offset
voltage temperature drift
between pins 7 and 8,
8 and 9 and 7 and 9
offset current of measurement
output (for 3 channels)
linearity of current transfer
maximum peak output current
(pins 7, 8 and 9)
minimum output voltage
(pins 7, 8 and 9)
maximum output voltage
(pins 7, 8 and 9)
small signal bandwidth
(pins 7, 8 and 9)
large signal bandwidth
(pins 7, 8 and 9)
cathode output propagation
time 50% input to 50% output
(pins 7, 8 and 9)
o(c3)
j
= 20 to +150 C; V
=
PARAMETER
1
2
V
DD
; C
L
= 10 pF (C
DD
= 180 to 210 V. Test conditions: T
L
consists of parasitic and cathode capacitance); R
I
I
I
1.5 V < V
3 V < V
1.5 V < V
3 V < V
50 V < V
V
V
V
V
V
square wave; f <1 MHz;
t
(pins 1, 2 and 3);
see Figs 6 and 7
i
i
o(c)
r
100 A < I
i
i
o(c)
o(c)
o(c)
= 0 A
= 0 A
= t
= 7.0 V; note 1
= 1.0 V; note 1
= 0 A;
f
= 60 V (p-p)
= 100 V (p-p)
= 100 V (p-p)
= 40 ns
o(m)
o(m)
CONDITIONS
o(c)
i
i
< 5.5 V;
< 5.5 V;
5
< 6 V
o(c)
< 6 V
< V
< 100 A;
DD
50 V
amb
8.8
47.5
116
0.9
V
2.5
50
= 25 C; V
DD
MIN.
15
10.3
2.5
3.2
51.0
0
129
0
0
1.0
28
9.0
8.0
32
DD
10
TYP.
= 200 V;
th(h-a)
Product specification
TDA6108JF
11.7
55.0
+2.5
142
5
+50
1.1
10
MAX.
= 18 K/W
mA
V
k
V
V
mV/K
mV/K
mA
V
V
MHz
MHz
ns
A
UNIT

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