MT47H32M16HR-37E:F Micron Technology Inc, MT47H32M16HR-37E:F Datasheet - Page 28
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MT47H32M16HR-37E:F
Manufacturer Part Number
MT47H32M16HR-37E:F
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H32M16HR-37EF.pdf
(132 pages)
Specifications of MT47H32M16HR-37E:F
Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
500ps
Maximum Clock Rate
533MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
205mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H32M16HR-37E:F
Manufacturer:
MICRON
Quantity:
5 373
Table 11: DDR2 I
Notes: 1–7 apply to the entire table
PDF: 09005aef82f1e6e2
512MbDDR2.pdf - Rev. R 12/10 EN
Parameter/Condition
Operating one bank active-pre-
charge current:
t
HIGH, CS# is HIGH between valid com-
mands; address bus inputs are switch-
ing; Data bus inputs are switching
Operating one bank active-read-
precharge current: I
4, CL = CL (I
t
t
HIGH between valid commands; ad-
dress bus inputs are switching; Data
pattern is same as I
Precharge power-down current:
All banks idle;
LOW; Other control and address bus
inputs are stable; Data bus inputs are
floating
Precharge quiet standby current:
All banks idle;
HIGH, CS# is HIGH; Other control and
address bus inputs are stable; Data
bus inputs are floating
Precharge standby current: All
banks idle;
HIGH, CS# is HIGH; Other control and
address bus inputs are switching; Da-
ta bus inputs are switching
Active power-down current: All
banks open;
LOW; Other control and address bus
inputs are stable; Data bus inputs are
floating
Active standby current: All banks
open;
MAX (I
HIGH, CS# is HIGH between valid com-
mands; Other control and address bus
inputs are switching; Data bus inputs
are switching
RC (I
RC =
RCD =
DD
t
RC (I
t
DD
CK =
t
),
RCD (I
),
t
RAS =
DD
t
t
DD
RP =
CK =
t
t
CK (I
),
CK =
), AL = 0;
DD
t
t
t
CK =
CK =
RAS =
); CKE is HIGH, CS# is
t
t
RAS MIN (I
t
t
DD
RP (I
CK (I
CK =
t
DD4W
CK (I
DD
),
t
t
CK (I
CK (I
t
DD
OUT
t
RAS =
DD
RAS MIN (I
Specifications and Conditions (Die Revision G)
t
t
CK (I
CK =
DD
); CKE is
); CKE is
= 0mA; BL =
DD
DD
); CKE is
DD
); CKE is
); CKE is
DD
t
t
RAS
CK (I
); CKE is
),
t
DD
RC =
DD
),
),
Symbol
I
I
I
I
I
I
DD3Pf
DD3Ps
I
I
DD2Q
DD2N
DD3N
DD2P
DD0
DD1
Slow PDN exit
Fast PDN exit
Configura-
x4, x8, x16
MR12 = 0
MR12 = 1
x4, x8
x4, x8
x4, x8
x4, x8
x4, x8
tion
x16
x16
x16
x16
x16
28
Electrical Specifications – I
-187E
TBD
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
512Mb: x4, x8, x16 DDR2 SDRAM
-25E/
-25
65
80
75
95
24
26
28
30
18
33
35
7
9
-3E/-3
60
75
70
90
22
24
25
27
15
30
32
7
9
-37E
© 2004 Micron Technology, Inc. All rights reserved.
55
70
65
85
20
22
23
25
14
27
29
7
9
DD
-5E
55
70
65
85
19
20
21
23
13
24
26
7
9
Parameters
Units
mA
mA
mA
mA
mA
mA
mA