MT41J256M8HX-15E:D Micron Technology Inc, MT41J256M8HX-15E:D Datasheet - Page 205

no-image

MT41J256M8HX-15E:D

Manufacturer Part Number
MT41J256M8HX-15E:D
Description
MICMT41J256M8HX-15E:D 2GB:X4,X8,X16 DDR3
Manufacturer
Micron Technology Inc
Type
DDR3 SDRAMr
Series
-r
Datasheets

Specifications of MT41J256M8HX-15E:D

Organization
256Mx8
Address Bus
18b
Maximum Clock Rate
1.333GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
165mA
Pin Count
78
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Format - Memory
RAM
Memory Type
DDR3 SDRAM
Memory Size
2G (256M x 8)
Speed
667MHz
Interface
Parallel
Voltage - Supply
1.425 V ~ 1.575 V
Operating Temperature
0°C ~ 95°C
Package / Case
78-TFBGA
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT41J256M8HX-15E:D
Manufacturer:
SAMSUNG
Quantity:
1 001
Part Number:
MT41J256M8HX-15E:D
Manufacturer:
MICRON
Quantity:
11 200
Part Number:
MT41J256M8HX-15E:D
Manufacturer:
MICRON21
Quantity:
1 684
Part Number:
MT41J256M8HX-15E:D
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
MT41J256M8HX-15E:D
Manufacturer:
MICRON/美光
Quantity:
20 000
Company:
Part Number:
MT41J256M8HX-15E:D
Quantity:
5 845
Part Number:
MT41J256M8HX-15E:D TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Asynchronous to Synchronous ODT Mode Transition (Power-Down Exit)
PDF: 09005aef826aaadc
2Gb_DDR3_SDRAM.pdf – Rev. K 04/10 EN
The DRAM’s ODT may exhibit either asynchronous or synchronous behavior during
power-down exit (PDX). This transition period occurs if the DLL is selected to be off
when in precharge power-down mode by setting MR0[12] to 0. Power-down exit begins
t
registered HIGH.
The transition period is
ODT assertion during power-down exit results in an R
t
(MAX) and ODTL on ×
may result in an R
t
Table 90 (page 204) summarizes these parameters.
If the AL has a large value, the uncertainty of the R
because ODTL on and ODTL off are derived from the WL, and WL is equal to CWL + AL.
Figure 119 (page 206) shows three different cases:
• ODT C: asynchronous behavior before
• ODT B: ODT state changes during the transition period, with
• ODT A: ODT state changes after the transition period with synchronous response
ANPD prior to CKE first being registered HIGH, and it ends
AONPD (MIN) and ODTL on ×
AOF (MIN) or as late as the greater of
ODTL off ×
(MAX)
Asynchronous to Synchronous ODT Mode Transition (Power-
t
CK +
t
TT
ANPD is equal to the greater of ODTL off + 1
t
AOF (MIN) and ODTL off ×
change as early as the lesser of
t
CK +
t
ANPD plus
t
205
AON (MAX). ODT deassertion during power-down exit
t
CK +
t
XPDLL.
t
AON (MIN) or as late as the greater of
t
AOFPD (MAX) and ODTL off ×
Micron Technology, Inc. reserves the right to change products or specifications without notice.
t
ANPD
t
CK +
TT
t
AOFPD (MIN) and ODTL off ×
state becomes quite large. This is
t
AOF (MAX) greater than
TT
change as early as the lesser of
t
XPDLL after CKE is first
© 2006 Micron Technology, Inc. All rights reserved.
t
CK or ODTL on + 1
t
AOFPD (MIN) less than
t
CK +
Down Exit)
t
t
AOF (MAX).
AONPD
t
AOFPD
t
CK.
t
CK +

Related parts for MT41J256M8HX-15E:D