MOC70P2_NL Fairchild Semiconductor, MOC70P2_NL Datasheet

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MOC70P2_NL

Manufacturer Part Number
MOC70P2_NL
Description
Manufacturer
Fairchild Semiconductor
Type
Transmissiver
Datasheet

Specifications of MOC70P2_NL

Number Of Elements
1
Output Device
Phototransistor
Gap Width
5.08mm
Slit Width
1.016mm
Reverse Breakdown Voltage
6V
Collector-emitter Voltage
30V
Forward Current
50mA
Collector Current (dc) (max)
20mA
Power Dissipation
150mW
Pin Count
4
Mounting
Through Hole
Operating Temp Range
-55C to 100C
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
©2001 Fairchild Semiconductor Corporation
MOC70P1, MOC70P2, MOC70P3 Rev. 1.0.0
MOC70P1, MOC70P2, MOC70P3
Phototransistor Optical Interrupter Switch
Features
Package Dimensions
Notes:
1. Dimensions for all drawings are in inches (millimeters).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.
PIN 2 CATHODE
PIN 1 (ANODE)
No contact sensing
5mm gap
.040” aperture
Low profile
PCB mount
Transistor output
0.250 [6.35]
0.140 [3.56]
0.105 [2.67]
0.153 [3.89] 2X
C L
0.510 [12.95]
0.506 [12.85]
0.380 [9.65]
0.200 [5.08] NOM
0.080 [2.03] NOM
0.020 [0.51] 4 X
PIN 3 (COLLECTOR)
PIN 4 (EMITTER)
0.100 [2.54]
0.050 [1.27]
SEATING PLANE
0.270 [6.86]
Description
The MOC70PX consists of an infrared light emitting
diode coupled to an NPN silicon phototransistor pack-
aged into an injection molded housing. The housing is
designed for wide gap, non contact sensing.
Schematic
1
2
4
3
October 2009
www.fairchildsemi.com

Related parts for MOC70P2_NL

MOC70P2_NL Summary of contents

Page 1

... PIN 1 (ANODE) Notes: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. ©2001 Fairchild Semiconductor Corporation MOC70P1, MOC70P2, MOC70P3 Rev. 1.0.0 Description The MOC70PX consists of an infrared light emitting diode coupled to an NPN silicon phototransistor pack- aged into an injection molded housing ...

Page 2

... Collector Current (See selection guide on the next page) C(ON) V Collector Emitter Saturation Voltage (See selection guide on the next page) CE (SAT) t Turn-on Time (ON) t Turn-off Time (OFF) ©2001 Fairchild Semiconductor Corporation MOC70P1, MOC70P2, MOC70P3 Rev. 1.0 25°C unless otherwise specified) A Parameter (2,3,4,5) (2,3,5) (1) ( 25° ...

Page 3

... Symbol Device ON-STATE COLLECTOR CURRENT I MOC70P1 C(ON) MOC70P2 MOC70P3 MOC70P1 MOC70P2 MOC70P3 MOC70P1 MOC70P2 MOC70P3 COLLECTOR-EMITTER SATURATION VOLTAGE V MOC70P1 CE (SAT) MOC70P2 MOC70P3 ©2001 Fairchild Semiconductor Corporation MOC70P1, MOC70P2, MOC70P3 Rev. 1.0.0 Test Conditions Min I = 5mA 10V 0. 0.30 0. 20mA 10V 1 2.0 4.0 ...

Page 4

... Fig. 5 Collector Current vs. Forward Current 10 Normalized to 20mA Pulse Width = 100 0.1 0. FORWARD CURRENT (mA) F ©2001 Fairchild Semiconductor Corporation MOC70P1, MOC70P2, MOC70P3 Rev. 1.0.0 Fig. 2 Forward Voltage vs. Ambient Temperature 1.2 1.4 1.6 1.8 Fig. 4 Collector Current vs. Collector-Emitter Voltage 25V CE 4 10V ...

Page 5

... Fig. 7 Switching Time Vs. Load Resistance 100 3mA T=100 0.1 10 100 R - LOAD RESISTANCE ( ) L ©2001 Fairchild Semiconductor Corporation MOC70P1, MOC70P2, MOC70P3 Rev. 1.0.0 (Continued) Fig. 8 Collector Current Vs. Shield Distance 1.00 Black Shield 0.10 0.01 1000 2 5 Normalized to value with shield removed Black Shield d 0 ...

Page 6

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ F-PFS™ Build it Now™ FRFET CorePLUS™ Global Power Resource CorePOWER™ ...

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