MMBTA06LT1XT Infineon Technologies, MMBTA06LT1XT Datasheet - Page 2

• Manufacturer Part Number: MMBTA06LT1XT
• Manufacturer: Infineon Technologies

Specifications of MMBTA06LT1XT

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage(max): 80V
• Emitter-base Voltage (max): 4V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 100
• Power Dissipation: 330mW
• Frequency (max): 100MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Compliant

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
Collector-emitter cutoff current
V
DC current gain
I
I
Collector-emitter saturation voltage
I
Base-emitter voltage
I
AC Characteristics
Transition frequency
I
Collector-base capacitance
V
1
C
C
E
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
CB
CE
CB
= 10 µA, I
= 1 mA, I
= 100 µA, I
= 10 mA, V
= 100 mA, V
= 100 mA, I
= 100 mA, V
= 20 mA, V
= 80 V, I
= 80 V, I
= 60 V, I
= 10 V, f = 1 MHz
B
C
E
E
B
= 0
E
CE
CE
= 0
B
= 0
= 0 , T
= 0
CE
CE
= 0
1)
= 10 mA
= 1 V
= 5 V, f = 20 MHz
= 1 V
= 1 V
1)
A
= 150 °C
A
= 25°C, unless otherwise specified
1)
2
f
C
Symbol
V
V
V
I
I
h
V
V
T
CBO
CEO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BE(ON)
cb
min.
100
100
80
80
4
-
-
-
-
-
-
-
SMBTA06/MMBTA06
Values
typ.
100
7
-
-
-
-
-
-
-
-
-
-
max.
0.25
100
0.1
1.2
20
2007-04-19
-
-
-
-
-
-
-
MHz
pF
Unit
V
µA
nA
-
V