MT41J128M8JP-125:G Micron Technology Inc, MT41J128M8JP-125:G Datasheet - Page 142

• Manufacturer Part Number: MT41J128M8JP-125:G
• Description: IC DDR3 SDRAM 1GBIT 78FBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT41J128M8JP-125:G

• Format - Memory: RAM
• Memory Type: DDR3 SDRAM
• Memory Size: 1G (128M x 8)
• Speed: 800MHz
• Interface: Parallel
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: 0°C ~ 95°C
• Package / Case: 78-TFBGA
• Lead Free Status / RoHS Status: Supplier Unconfirmed

Figure 87: Consecutive WRITE (BL8) to WRITE (BL8)
Figure 88: Consecutive WRITE (BC4) to WRITE (BC4) via MRS or OTF
Command 1
Command 1
DQS, DQS#
DQS, DQS#
Address 2
Address 2
DQ 3
DQ 3
CK#
CK#
CK
CK
WRITE
WRITE
Valid
Valid
T0
T0
Notes:
Notes:
NOP
NOP
T1
T1
t CCD
t CCD
1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. The BL8 setting is activated by either MR0[1:0] = 00 or MR0[1:0] = 01 and A12 = 1 during the WRITE commands at
3. DI n (or b) = data-in for column n (or column b).
4. BL8, WL = 5 (AL = 0, CWL = 5).
1. NOP commands are shown for ease of illustration; other commands may be valid at these times.
2. BC4, WL = 5 (AL = 0, CWL = 5).
3. DI n (or b) = data-in for column n (or column b).
4. The BC4 setting is activated by MR0[1:0] = 01 and A12 = 0 during the WRITE command at T0 and T4.
NOP
T2
NOP
T2
T0 and T4.
WL = 5
WL = 5
NOP
NOP
T3
T3
WRITE
WRITE
Valid
Valid
T4
T4
t WPRE
t WPRE
NOP
DI
NOP
T5
n
T5
DI
n
n + 1
n + 1
DI
DI
NOP
n + 2
NOP
n + 2
T6
DI
T6
DI
n + 3
n + 3
WL = 5
WL = 5
DI
DI
t WPST
n + 4
NOP
NOP
T7
DI
T7
n + 5
DI
NOP
n + 6
NOP
T8
DI
T8
t WPRE
n + 7
DI
NOP
NOP
DI
DI
T9
T9
b
b
b + 1
b + 1
DI
DI
T10
NOP
b + 2
T10
NOP
b + 2
DI
DI
t BL = 4 clocks
b + 3
b + 3
DI
DI
t WPST
t BL = 4 clocks
NOP
b + 4
NOP
T11
T11
DI
b + 5
DI
NOP
b + 6
T12
T12
NOP
DI
b + 7
Transitioning Data
DI
Transitioning Data
t WPST
NOP
T13
T13
NOP
t WR
t WTR
t WR
t WTR
Don’t Care
Don’t Care
NOP
NOP
T14
T14