CMF10120D Cree Inc, CMF10120D Datasheet - Page 10

• Manufacturer Part Number: CMF10120D
• Description: SIC MOSFET N-CH 1200V 24A TO247
• Manufacturer: Cree Inc
• Series: Z-FET™r

Specifications of CMF10120D

• Fet Type: SiCFET N-Channel, Silicon Carbide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 10A, 20V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4V @ 500µA
• Gate Charge (qg) @ Vgs: 47.1nC @ 20V
• Input Capacitance (ciss) @ Vds: 928pF @ 800V
• Power - Max: 152W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 24A
• Drain Source Voltage Vds: 1.2kV
• On Resistance Rds(on): 0.16ohm
• Rds(on) Test Voltage Vgs: 20V
• Rohs Compliant: YES
• Configuration: Single
• Resistance Drain-source Rds (on): 160 mOhms
• Forward Transconductance Gfs (max / Min): 3.7 S, 3.4 S
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 24 A
• Power Dissipation: 152 W
• Mounting Style: Through Hole
• Gate Charge Qg: 47.1 nC
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

10
A significant benefit of the SiC DMOSFET is the elimination of the tail current observed
in silicon IGBTs. However, it is very important to note that the current tail does
provide a certain degree of parasitic dampening during turn-off. Additional ringing
and overshoot is typically observed when silicon IGBTs is replaced with SiC DMOSFETs.
The additional voltage overshoot can be high enough to destroy the device.
Therefore, it is critical to manage the output interconnection parasitics (and snubbers)
to keep the ringing and overshoot from becoming problematic.
ESD RATINGS
Stray inductance on source lead causes load di/dt to be
fed back into gate drive which causes the following:
•
•
ESD Test
CMF10120D Rev. -
Switch di/dt is limited
Could cause oscillation
ESD-HBM
ESD-CDM
ESD-MM
DRIVE
20V
R GATE
SiC DMOS
Total Devices Sampled
All Devices Passed 1000V
All Devices Passed 1000V
LOAD CURRENT
All Devices Passed 400V
LOAD CURRENT
Kelvin gate connection with separate
source return is highly recommended
DRIVE
20V
Resulting Classification
R GATE
IV (>1000V)
2 (>2000V)
C (>400V)
SiC DMOS
L STRAY