CMF10120D Cree Inc, CMF10120D Datasheet - Page 3

SIC MOSFET N-CH 1200V 24A TO247

CMF10120D

Manufacturer Part Number
CMF10120D
Description
SIC MOSFET N-CH 1200V 24A TO247
Manufacturer
Cree Inc
Series
Z-FET™r
Datasheets

Specifications of CMF10120D

Fet Type
SiCFET N-Channel, Silicon Carbide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
220 mOhm @ 10A, 20V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
4V @ 500µA
Gate Charge (qg) @ Vgs
47.1nC @ 20V
Input Capacitance (ciss) @ Vds
928pF @ 800V
Power - Max
152W
Mounting Type
*
Package / Case
*
Transistor Polarity
N Channel
Continuous Drain Current Id
24A
Drain Source Voltage Vds
1.2kV
On Resistance Rds(on)
0.16ohm
Rds(on) Test Voltage Vgs
20V
Rohs Compliant
YES
Configuration
Single
Resistance Drain-source Rds (on)
160 mOhms
Forward Transconductance Gfs (max / Min)
3.7 S, 3.4 S
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
24 A
Power Dissipation
152 W
Mounting Style
Through Hole
Gate Charge Qg
47.1 nC
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Typical Performance
3
Fig 1. Typical Output Characteristics T
30
30
25
25
20
20
15
15
10
10
10000
60
60
50
50
40
40
30
30
20
20
10
Figure 3. Typical Transfer Characteristics
5
0
1000
0
100
0
10
CMF10120D Rev. -
0
1
0
10000
1000
100
10
1
0
5
5
V
T = 125
50
DS
=25V
V
GS
Fig 5A and 5B. Typical Capacitance vs. Drain – Source Voltage
°
V
(V)
C
50
V
DS
10
10
DS
100
(V)
C
(V)
C
T = 25
C
rss
oss
iss
V
°
DS
100
C
15
C
150
(V)
15
C
J
C
f = 1 MHz
rss
V
oss
= 25ºC
iss
GS
= 0 V
V
GS
=10V
150
f = 1 MHz
200
V
20
20
GS
= 0 V
10000
200
1000
100
10
1
Fig 4. Normalized On-Resistance vs. Temperature
0
Fig 2. Typical Output Characteristics T
50
50
45
45
40
40
35
35
30
30
25
25
20
20
15
15
10
10
10000
5
0
1000
100
10
0
1
200
0
V
C
5
DS
400
iss
200
C
C
(V)
oss
rss
V
V
V
f = 1 MHz
DS
600
V
10
C
GS
DS
400
GS
iss
(V)
=20V
C
C
(V)
oss
= 0 V
rss
800
f = 1 MHz
600
V
15
GS
J
= 125ºC
= 0 V
800
20

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