CMF10120D Cree Inc, CMF10120D Datasheet - Page 5

• Manufacturer Part Number: CMF10120D
• Description: SIC MOSFET N-CH 1200V 24A TO247
• Manufacturer: Cree Inc
• Series: Z-FET™r

Specifications of CMF10120D

• Fet Type: SiCFET N-Channel, Silicon Carbide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 10A, 20V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4V @ 500µA
• Gate Charge (qg) @ Vgs: 47.1nC @ 20V
• Input Capacitance (ciss) @ Vds: 928pF @ 800V
• Power - Max: 152W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 24A
• Drain Source Voltage Vds: 1.2kV
• On Resistance Rds(on): 0.16ohm
• Rds(on) Test Voltage Vgs: 20V
• Rohs Compliant: YES
• Configuration: Single
• Resistance Drain-source Rds (on): 160 mOhms
• Forward Transconductance Gfs (max / Min): 3.7 S, 3.4 S
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 24 A
• Power Dissipation: 152 W
• Mounting Style: Through Hole
• Gate Charge Qg: 47.1 nC
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Clamped Inductive Switch Testing Fixture
5
+
-
Fig 11. Switching Waveform Test Circuit
800V
Vpk
Fig 13. Body Diode Recovery Waveform
Ic
Diode Reverse
Recovery Energy
CMF10120D Rev. -
tx
10% V cc
Irr
42.3μf
t1
t rr
856μH
t2
Diode Recovery
Waveforms
10% Irr
Erec=
Qrr=
∫
CMF20120D
t1
id dt
t2
D.U.T.
∫
V cc
tx
id dt
trr
C2D10120D
10A, 1200V
SiC Schottky
+
Output (i D )
Input (V i )
-
800V
i D(on)
i D(off)
V GS(on)
V GS(off)
10%
Fig 14. Body Diode Recovery Test
50%
Fig 12. Switching Test Waveform Times
42.3μf
t d(on)i
90%
t on(i)
Input Pulse
Rise Time
10%
t fi
pulse duration
t w
90%
856μH
CMF20120D
90%
t d(off)i
50%
90%
10%
Input Pulse
Fall Time
t off(i)
CMF20120D
D.U.T.
t ri
10%