CMF10120D Cree Inc, CMF10120D Datasheet - Page 2

• Manufacturer Part Number: CMF10120D
• Description: SIC MOSFET N-CH 1200V 24A TO247
• Manufacturer: Cree Inc
• Series: Z-FET™r

Specifications of CMF10120D

• Fet Type: SiCFET N-Channel, Silicon Carbide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 10A, 20V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4V @ 500µA
• Gate Charge (qg) @ Vgs: 47.1nC @ 20V
• Input Capacitance (ciss) @ Vds: 928pF @ 800V
• Power - Max: 152W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 24A
• Drain Source Voltage Vds: 1.2kV
• On Resistance Rds(on): 0.16ohm
• Rds(on) Test Voltage Vgs: 20V
• Rohs Compliant: YES
• Configuration: Single
• Resistance Drain-source Rds (on): 160 mOhms
• Forward Transconductance Gfs (max / Min): 3.7 S, 3.4 S
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 24 A
• Power Dissipation: 152 W
• Mounting Style: Through Hole
• Gate Charge Qg: 47.1 nC
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

NOTES: 1. The recommended on-state V
Reverse Diode Characteristics
Gate Charge Characteristics
Electrical Characteristics
Thermal Characteristics
Symbol
2
Symbol
Symbol
Symbol
V
R
V
t
t
(BR)DSS
I
I
C
C
C
d(off)i
E
E
GS(th)
DS(on)
d(on)i
R
g
R
R
R
Q
Q
DSS
GSS
V
I
t
t
Q
Q
t
oss
rss
ON
Off
iss
fi
rrm
θCS
fs
r
θJC
θJA
G
rr
gd
sd
gs
rr
g
CMF10120D Rev. -
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Internal Gate Resistance
Parameter
Thermal Resistance from Junction to Case
Case to Sink, w/ Thermal Compound
Thermal Resistance From Junction to Ambient
Parameter
Gate to Source Charge
Gate to Drain Charge
Gate Charge Total
Parameter
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
Parameter
GS
is +20V and the recommended off-state V
Min.
1200
Typ.
1.57
138
3.5
3.1
94
Typ.
11.8
21.5
47.1
Typ.
0.66
0.25
Typ.
7.45
13.6
160
190
928
261
120
2.5
1.8
0.5
3.7
3.4
63
14
46
37
Max.
5
7
Max.
Max.
40
Max. Unit
Unit
125
250
220
260
50
nC
ns
4
V
A
Unit
°C/W
Unit
mΩ
V
V
V
V
di
μA
nA
pF
ns
μJ
μJ
nC
Ω
V
V
S
GS
GS
GS
R
GS
F
/dt= 100A/μs
= 800V,
= -5V, I
= -2V, I
= -5V, I
is between -2V and -5V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1MHz
V
V
V
I
R
L = 856μH
Per JEDEC24 Page 27
V
D
V
I
V
GS
DS
DS
DS
DS
GS
GS
GS
DS
DS
GS
DS
AC
DD
GS
G
GS
D
= 6.8Ω
DD
GS
= 10A
= 20V, I
= 20V, I
Test Conditions
= 25mV
= -5V, I
= V
= V
= 1200V, V
= 1200V, V
= 800V
= 20V, V
= 20V, I
= 20V, I
= 0V
= 800V
= -2/20V
= 0V, f = 1MHz , V
=10A
= 800V
= -2/20V Per JEDEC24-2
F
F
F
= 5A, T
= 5A, T
= 10A, T
GS
GS
Test Conditions
Test Conditions
Test Conditions
, I
, I
DS
DS
D
D
D
D
D
= 50μA
DS
J
J
= 500uA, T
= 500uA, T
= 10A, T
= 10A, T
= 10A, T
= 10A, T
= 25ºC
= 25ºC
J
= 0V
GS
GS
= 25ºC
= 0V, T
= 0V, T
J
J
AC
J
J
= 25ºC
= 125ºC
= 25ºC
= 125ºC
= 25mV
J
J
J
J
= 25ºC
= 125ºC
= 25ºC
= 125ºC
fig. 13,14
Note
fig. 4
fig. 3
fig. 5
fig. 12
fig. 6
Note
fig.9
Note
Note
1