CMF10120D Cree Inc, CMF10120D Datasheet - Page 4

• Manufacturer Part Number: CMF10120D
• Description: SIC MOSFET N-CH 1200V 24A TO247
• Manufacturer: Cree Inc
• Series: Z-FET™r

Specifications of CMF10120D

• Fet Type: SiCFET N-Channel, Silicon Carbide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 10A, 20V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4V @ 500µA
• Gate Charge (qg) @ Vgs: 47.1nC @ 20V
• Input Capacitance (ciss) @ Vds: 928pF @ 800V
• Power - Max: 152W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 24A
• Drain Source Voltage Vds: 1.2kV
• On Resistance Rds(on): 0.16ohm
• Rds(on) Test Voltage Vgs: 20V
• Rohs Compliant: YES
• Configuration: Single
• Resistance Drain-source Rds (on): 160 mOhms
• Forward Transconductance Gfs (max / Min): 3.7 S, 3.4 S
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 24 A
• Power Dissipation: 152 W
• Mounting Style: Through Hole
• Gate Charge Qg: 47.1 nC
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Typical Performance
4
Fig 7. Inductive Switching Energy(Turn-on) vs. ID
Fig 9. Typical Gate Charge Characteristics @ 25°C
20
20
15
15
10
10
400
400
350
350
300
300
250
250
200
200
150
150
100
-5
5
5
0
50
CMF10120D Rev. -
0
0
0
2
10
0.0001
0.001
0.01
0.01
0.1
0.1
Drain Current(A)
1
1
4
1E-6
Gate Charge (nC)
20
6
Fig 6. Transient Thermal Impedence, Junction - Case
10E-6
8
30
V
I
V
R
V
D
I
DD
GS
G
DD
D
=10A
=
=
10
=800V
=
= -2/20V
11.8Ω Total
10A
800V
40
100E-6
12
14
50
1E-3
Time (sec)
10E-3
Fig 8. Inductive Switching Energy(Turn-off) vs ID
300
300
250
250
200
200
150
150
100
100
Fig 10. Inductive Switching Energy vs. Temp
50
0
25
100E-3
45
Drain Current(A)
65
Temp ( C)
1
85
V
R
V
I
10
GS
G
DD
D
=
=
= -2/20V
=
11.8Ω Total
10A
105
800V
EON
EON
EOFF
EOFF
125