STN3N40K3 STMicroelectronics, STN3N40K3 Datasheet
STN3N40K3
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STN3N40K3 Summary of contents
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... Order code STN3N40K3 April 2011 N-channel 400 V, 3 Ω , 1.8 A SOT-223 SuperMESH3™ Power MOSFET max 1.8 A 3.3 W Figure 1. TM Marking 3N40K3 Doc ID 17697 Rev 2 STN3N40K3 SOT-223 Internal schematic diagram D(2) G(1) S(3) Package Packaging SOT-223 Tape and reel AM01476v1 1/13 www.st.com ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/ Doc ID 17697 Rev 2 STN3N40K3 ...
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... STN3N40K3 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain source voltage DS V Gate-source voltage GS I Drain current continuous Drain current continuous T D (2) I Drain current pulsed DM (3) I Avalanche current, repetetive or not repetetive AR (4) E Single pulse avalanche energy AS P Total dissipation at T TOT ...
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... f=1 MHz open drain V = 320 (see Figure 16) DSS DSS Doc ID 17697 Rev 2 Min. Typ 400 =125 ° 3. Min. Typ. 165 - 1 when V oss when V oss STN3N40K3 Max. Unit V 1 µA 50 µA ±10 µA 4.5 V Ω 3.4 Max. Unit Ω ...
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... STN3N40K3 Table 6. Switching times Symbol t Turn on delay time d(on) t Rise time r t Turn off delay time d(off) t Fall time f Table 7. Source drain diode Symbol Source-drain current I SD Source-drain current (1) I SDM (pulsed) (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...
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... V GS 4.2 350 4.0 300 3.8 250 3.6 200 3.4 150 3.2 100 3.0 50 2.8 2 (nC) g Doc ID 17697 Rev 2 STN3N40K3 Thermal impedance Transfer characteristics V =15V Static drain-source on resistance V =10V GS 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 AM08995v1 V (V) GS AM08997v1 I (A) ...
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... STN3N40K3 Figure 8. Capacitance variations C (pF) 100 Figure 10. Normalized gate threshold voltage vs. temperature V GS(th) (norm) 1.10 1.00 0.90 0.80 0.70 -75 -25 25 Figure 12. Source-drain diode forward characteristics V SD (V) 1.0 0.9 0.8 T =25°C J 0.7 T =150°C 0.6 J 0.5 0.4 0 0.4 0.8 Figure 9. ...
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... Electrical characteristics Figure 14. Maximum avalanche energy vs. starting Tj E (mJ 8/13 AM09004v1 =0 100 120 140 T (°C) J Doc ID 17697 Rev 2 STN3N40K3 ...
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... STN3N40K3 3 Test circuits Figure 15. Switching times test circuit for resistive load D.U. Figure 17. Test circuit for inductive load switching and diode recovery times FAST L=100μH G D.U.T. DIODE Ω Figure 19. Unclamped inductive waveform Figure 16. Gate charge test circuit 3.3 2200 μF μ ...
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... Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/13 Doc ID 17697 Rev 2 STN3N40K3 ® ...
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... STN3N40K3 Table 8. SOT-223 mechanical data Dim Figure 21. SOT-223 mechanical data drawing B Min. 2.27 4.57 0.2 0.63 1.5 2.9 0.67 6.7 3.5 6 Doc ID 17697 Rev 2 Package mechanical data mm Typ. Max. 2.3 2.33 4.6 4.63 0.4 0.6 0.65 0.67 1.6 1.7 0.32 3 3.1 ...
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... Revision history 5 Revision history Table 9. Document revision history Date 29-Jun-2010 08-Apr-2011 12/13 Revision 1 First release. 2 Document status promoted from preliminary data to datasheet. Doc ID 17697 Rev 2 STN3N40K3 Changes ...
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... STN3N40K3 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...