STN3N40K3 STMicroelectronics, STN3N40K3 Datasheet - Page 4

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STN3N40K3

Manufacturer Part Number
STN3N40K3
Description
MOSFET N-CH 400V 1.8A SOT223
Manufacturer
STMicroelectronics
Series
SuperMESH3™r
Datasheet

Specifications of STN3N40K3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.4 Ohm @ 600mA, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
165pF @ 50V
Power - Max
3.3W
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-11222-2

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STN3N40K3
Manufacturer:
ST
Quantity:
10 000
Part Number:
STN3N40K3
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
2
4/13
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 4.
Table 5.
1. Is defined as a constant equivalent capacitance giving the same charging time as C
2. Is defined as a constant equivalent capacitance giving the same storage energy as C
C
C
V
Symbol
Symbol
R
V
oss(er)
(BR)DSS
oss(tr)
increases from 0 to 80% V
increases from 0 to 80% V
C
I
I
C
DS(on)
C
GS(th)
Q
Q
DSS
GSS
Q
R
oss
rss
iss
gs
gd
g
g
(2)
(1)
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance energy
related
Equivalent output
capacitance time
related
Instrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
DSS
DSS
GS
= 0)
Doc ID 17697 Rev 2
I
V
V
V
V
V
V
V
f=1 MHz open drain
V
V
(see
D
GS
GS
GS
GS
GS
DS
DS
DD
DS
DS
= 1 mA, V
=0 to 320 V, V
= Max rating
= Max rating, T
= ± 20 V, V
= V
= 10 V, I
= 50 V, f = 1 MHz,
= 0
= 10 V
= 320 V, I
Figure
Test conditions
Test conditions
DS
, I
16)
GS
D
D
D
= 50 µA
= 0.6 A
= 0
DS
= 1.8 A,
GS
=0
C
=0
=125 °C
Min.
Min.
400
3
-
-
-
-
-
oss
oss
Typ.
Typ.
3.75
165
17
14
10
11
when V
3
9
2
7
3
when V
STN3N40K3
DS
Max.
Max.
±10
DS
4.5
3.4
50
1
-
-
-
-
-
Unit
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
pF
Ω
V
V
Ω

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