STN3N40K3 STMicroelectronics, STN3N40K3 Datasheet - Page 7

• Manufacturer Part Number: STN3N40K3
• Description: MOSFET N-CH 400V 1.8A SOT223
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STN3N40K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.4 Ohm @ 600mA, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 165pF @ 50V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11222-2

STN3N40K3
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
V
GS(th)
1.00
0.90
0.80
(norm)
1.10
0.70
100
(pF)
(V)
V
0.7
0.6
10
0.5
0.8
0.4
0.9
1.0
C
SD
-75
1
0.1
0
Capacitance variations
vs. temperature
characteristics
T
J
=25°C
-25
0.4
1
25
0.8
T
J
=150°C
10
I
D
75
1.2
=50µA
T
100
J
=-50°C
125
1.6
V
DS
Doc ID 17697 Rev 2
AM08998v1
AM09000v1
AM09003v1
I
T
SD
(V)
Coss
J
Ciss
Crss
(°C)
(A)
Figure 9.
Figure 11. Normalized on resistance vs.
Figure 13. Normalized B
R
BV
DS(on)
E
0.90
(norm)
(norm)
1.00
0.95
1.05
(µJ)
1.10
DSS
0.3
0.1
1.5
oss
0.8
0.5
0.4
0.2
0.5
0.7
0.6
2.5
2.0
1.0
0
0
-75
-75
0
Output capacitance stored energy
temperature
100
-25
-25
V
I
I
200
25
GS
D
D
25
=1mA
Electrical characteristics
=0.6A
=10V
VDSS
300
75
75
vs. temperature
125
400
125
T
AM08999v1
AM09001v1
AM09002v1
V
T
J
(°C)
DS
J
(°C)
(V)
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