STN3N40K3 STMicroelectronics, STN3N40K3 Datasheet - Page 5

• Manufacturer Part Number: STN3N40K3
• Description: MOSFET N-CH 400V 1.8A SOT223
• Manufacturer: STMicroelectronics
• Series: SuperMESH3™r

Specifications of STN3N40K3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.4 Ohm @ 600mA, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 165pF @ 50V
• Power - Max: 3.3W
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-11222-2

STN3N40K3
Table 6.
Table 7.
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
SD
d(on)
d(off)
RRM
RRM
I
Q
Q
SD
t
t
t
t
rr
rr
r
f
rr
rr
(2)
(1)
Turn on delay time
Rise time
Turn off delay time
Fall time
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
Doc ID 17697 Rev 2
I
I
V
(see
I
V
(see
V
R
(see
SD
SD
SD
DD
DD
DD
G
= 4.7 Ω, V
= 0.6 A, V
= 1.8 A, di/dt = 100 A/µs
= 1.8 A, di/dt = 100 A/µs
= 60 V
= 60 V, T
= 200 V, I
Figure
Figure
Figure
Test conditions
Test conditions
15)
17)
17)
GS
j
D
GS
= 150 °C
= 0.6,
= 0
= 10 V
Min.
Min.
Electrical characteristics
-
-
-
-
-
Typ.
Typ.
145
490
166
580
18
14
7
7
7
8
Max.
Max
1.8
7.2
1.5
-
Unit
Unit
nC
nC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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