XC6VSX475T-2FFG1759E Xilinx Inc, XC6VSX475T-2FFG1759E Datasheet - Page 2

• Manufacturer Part Number: XC6VSX475T-2FFG1759E
• Description: IC FPGA VIRTEX 1759FCBGA
• Manufacturer: Xilinx Inc
• Series: Virtex™ 6 SXTr

Specifications of XC6VSX475T-2FFG1759E

• Number Of Logic Elements/cells: 476160
• Number Of Labs/clbs: 37200
• Total Ram Bits: 39223296
• Number Of I /o: 840
• Number Of Gates: -
• Voltage - Supply: 0.95 V ~ 1.05 V
• Mounting Type: Surface Mount
• Operating Temperature: -40°C ~ 100°C
• Package / Case: 1759-BBGA, FCBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: XC6VSX475T-2FFG1759I; XC6VSX475T-2FFG1759I

Table 2: Recommended Operating Conditions
Table 3: DC Characteristics Over Recommended Operating Conditions
DS152 (v3.2) April 1, 2011
Product Specification
Notes:
1.
2.
3.
4.
5.
6.
7.
Notes:
1.
2.
3.
V
Symbol
V
CCO
Symbol
V
C
V
I
V
V
I
I
I
DRINT
V
BATT
REF
RPU
RPD
BATT
CCAUX
IN
I
Configuration data is retained even if V
Includes V
The configuration supply voltage V
All voltages are relative to ground.
A total of 100 mA per bank should not be exceeded.
V
During eFUSE programming, V
connected to GND.
Typical values are specified at nominal voltage, 25°C.
Maximum value specified for worst case process at 25°C.
This measurement represents the die capacitance at the pad, not including the package.
CCINT
DRI
I
n
V
IN
FS
r
L
T
BATT
(1)(2)(3)
(3)
IN
(5)
j
(7)
(6)
is required only when using bitstream encryption. If battery is not used, connect V
Data retention V
Data retention V
V
Input or output leakage current per pin (sample-tested)
Die input capacitance at the pad
Pad pull-up (when selected) @ V
Pad pull-up (when selected) @ V
Pad pull-up (when selected) @ V
Pad pull-up (when selected) @ V
Pad pull-down (when selected) @ V
Battery supply current
Temperature diode ideality factor
Series resistance
REF
Internal supply voltage relative to GND for all devices except -1L devices.
For -1L commercial temperature range devices: internal supply voltage relative
to GND, T
For -1L industrial temperature range devices: internal supply voltage relative to GND,
T
Auxiliary supply voltage relative to GND
Supply voltage relative to GND
2.5V supply voltage relative to GND
2.5V and below supply voltage relative to GND
Maximum current through any pin in a powered or unpowered bank when forward
biasing the clamp diode.
Battery voltage relative to GND
External voltage supply for eFUSE programming
Junction temperature operating range for commercial (C) temperature devices
Junction temperature operating range for extended (E) temperature devices
Junction temperature operating range for industrial (I) temperature devices
CCO
j
= –40°C to +100°C
leakage current per pin
of 1.2V, 1.5V, 1.8V, and 2.5V.
j
= 0°C to +85°C
CCINT
CCAUX
FS
voltage (below which configuration data might be lost)
voltage (below which configuration data might be lost)
must be within the recommended operating range and
CC_CONFIG
CCO
IN
IN
IN
IN
drops to 0V.
Description
= 0V, V
= 0V, V
= 0V, V
= 0V, V
is also known as V
IN
= 2.5V
Description
CCO
CCO
CCO
CCO
= 2.5V
= 1.8V
= 1.5V
= 1.2V
www.xilinx.com
Virtex-6 FPGA Data Sheet: DC and Switching Characteristics
CCO_0
.
(1)(2)
BATT
T
j
=
to either ground or V
+15
°
C to +85
0.75
Min
2.0
20
–
–
–
8
5
1
3
–
–
–
GND – 0.20
GND – 0.20 V
2.375
2.375
0.95
0.87
0.91
1.14
Min
–40
°
1.0
C. Otherwise, V
–
0
0
1.0002
Typ
–
–
–
–
–
–
–
–
–
–
–
5
CCAUX
CCO
.
2.625
2.625
2.625
2.625
Max
1.05
0.93
0.97
100
100
2.5
Max
10
85
150
10
10
80
40
30
20
80
–
–
8
–
–
FS
+ 0.2
can be
Units
Units
µA
µA
pF
µA
µA
µA
µA
µA
nA
mA

V
V
n
°C
°C
°C
V
V
V
V
V
V
V
V
V
2