MT47H64M16HR-25E:E Micron Technology Inc, MT47H64M16HR-25E:E Datasheet - Page 59

• Manufacturer Part Number: MT47H64M16HR-25E:E
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H64M16HR-25E:E

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 400ps
• Maximum Clock Rate: 800MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: FBGA
• Operating Temp Range: 0C to 85C
• Operating Supply Voltage (max): 1.9V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 320mA
• Pin Count: 84
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

Figure 22: Nominal Slew Rate for
Figure 23: Tangent Line for
PDF: 09005aef821ae8bf
Rev. O 9/08 EN
Vil(dc) MAX
Vil(dc) MAX
Vih(ac) MIN
Vih(dc) MIN
Vil(ac) MAX
Vih(ac) MIN
Vih(dc) MIN
Vil(ac) MAX
Setup slew rate
falling signal
Vref(dc)
Vref(dc)
VddQ
VddQ
t
CK#
CK#
IS
Vss
Vss
CK
CK
Nominal
Vref to AC
t
Vref to AC
IS
line
region
=
region
ΔTF
Vref(dc) - Vil(ac) MAX
ΔTF
Tangent
ΔTF
t IS
line
t IS
Nominal
slew rate
Setup slew rate
rising signal
Nominal
59
t IH
line
t IH
Setup slew rate
rising signal
=
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Tangent line (Vih[ac] MIN - Vref[dc])
ΔTR
ΔTR
1Gb: x4, x8, x16 DDR2 SDRAM
t IS
t IS
Nominal
slew rate
=
Tangent
ΔTR
Vref to AC
Vih(ac) MIN - Vref(dc)
line
Vref to AC
t IH
region
Input Slew Rate Derating
region
t IH
ΔTR
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