MT47H128M8HQ-187E:E Micron Technology Inc, MT47H128M8HQ-187E:E Datasheet - Page 128
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MT47H128M8HQ-187E:E
Manufacturer Part Number
MT47H128M8HQ-187E:E
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H128M8HQ-187EE.pdf
(135 pages)
Specifications of MT47H128M8HQ-187E:E
Organization
128Mx8
Density
1Gb
Address Bus
17b
Access Time (max)
350ps
Maximum Clock Rate
1.066GHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
210mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H128M8HQ-187E:E TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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Figure 78: RESET Function
PDF: 09005aef821ae8bf
Rev. O 9/08 EN
Bank address
Command
Address
ODT
DQS 3
DM 3
CK#
CKE
A10
DQ 3
R
CK
tt
Bank a
READ
Col n
T0
High-Z
High-Z
Notes:
NOP 2
T1
1. Vdd, VddL, VddQ, Vtt, and Vref must be valid at all times.
2. Either NOP or DESELECT command may be applied.
3. DM represents DM for x4/x8 configuration and UDM, LDM for x16 configuration. DQS
4. In certain cases where a READ cycle is interrupted, CKE going HIGH may result in the
5. Initialization timing is shown in Figure 41 (page 89).
represents DQS, DQS#, UDQS, UDQS#, LDQS, LDQS#, RDQS, and RDQS# for the appropri-
ate configuration (x4, x8, x16).
completion of the burst.
Bank b
Col n
READ
T2
NOP 2
Indicates a break in
time scale
T3
DO
DO
NOP 2
T4
128
System
DO
RESET
t DELAY
Unknown
T5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1
1Gb: x4, x8, x16 DDR2 SDRAM
R
tt
On
High-Z
High-Z
Transitioning Data
t CL
© 2004 Micron Technology, Inc. All rights reserved.
t CK
Start of normal 5
initialization
t CL
sequence
NOP 2
Ta0
4
T = 400ns (MIN)
t CKE (MIN)
All banks
Tb0
PRE
Don’t Care
High-Z
t RPA
Reset
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