MT47H128M8HQ-187E:E Micron Technology Inc, MT47H128M8HQ-187E:E Datasheet - Page 43
![no-image](/images/manufacturer_photos/0/4/441/micron_technology_inc_sml.jpg)
MT47H128M8HQ-187E:E
Manufacturer Part Number
MT47H128M8HQ-187E:E
Description
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H128M8HQ-187EE.pdf
(135 pages)
Specifications of MT47H128M8HQ-187E:E
Organization
128Mx8
Density
1Gb
Address Bus
17b
Access Time (max)
350ps
Maximum Clock Rate
1.066GHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
0C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
210mA
Pin Count
60
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT47H128M8HQ-187E:E TR
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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ODT DC Electrical Characteristics
Table 13: ODT DC Electrical Characteristics
All voltages are referenced to Vss
PDF: 09005aef821ae8bf
Rev. O 9/08 EN
Parameter
Rtt effective impedance value for 75Ω setting
EMR (A6, A2) = 0, 1
Rtt effective impedance value for 150Ω setting
EMR (A6, A2) = 1, 0
Rtt effective impedance value for 50Ω setting
EMR (A6, A2) = 1, 1
Deviation of VM with respect to VddQ/2
Notes:
1. Rtt1(eff) and Rtt2(eff) are determined by separately applying Vih(AC) and Vil(DC) to the
2. Minimum IT and AT device values are derated by six percent when the devices operate
3. Measure voltage (VM) at tested ball with no load.
ball being tested, and then measuring current, I(Vih[AC]), and I(Vil[AC]), respectively.
between –40°C and 0°C (T
43
C
).
Symbol
Rtt1(eff)
Rtt2(eff)
Rtt3(eff)
ΔVM
Micron Technology, Inc. reserves the right to change products or specifications without notice.
ODT DC Electrical Characteristics
1Gb: x4, x8, x16 DDR2 SDRAM
Min
120
60
40
–6
Nom
150
75
50
–
© 2004 Micron Technology, Inc. All rights reserved.
Max
180
90
60
6
Units
%
Ω
Ω
Ω
Notes
1, 2
1, 2
1, 2
3
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