TC59LM818DMBI-37 Toshiba, TC59LM818DMBI-37 Datasheet - Page 3

• Manufacturer Part Number: TC59LM818DMBI-37
• Manufacturer: Toshiba
• Type: DDR FCRAMr

Specifications of TC59LM818DMBI-37

• Organization: 16Mx18
• Density: 288Mb
• Address Bus: 17b
• Access Time (max): 650ps
• Maximum Clock Rate: 533MHz
• Operating Supply Voltage (typ): 2.5V
• Package Type: BGA
• Operating Temp Range: -40C to 100C
• Operating Supply Voltage (max): 2.625V
• Operating Supply Voltage (min): 2.375V
• Supply Current: 420mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / Rohs Status: Not Compliant

BLOCK DIAGRAM
BA0, BA1
A0~A14
Note: The TC59LM818DMBI configuration is 4 Bank of 32768 × 128 × 18 of cell array with the DQ pins numbered DQ0~DQ17.
CLK
CLK
CS
PD
FN
COMMAND
DECODER
COUNTER
ADDRESS
REFRESH
BUFFER
BUFFER
CLOCK
DLL
GENERATOR
COUNTER
LOWER ADDRESS
UPPER ADDRESS
REGISTER
CONTROL
BURST
SIGNAL
MODE
LATCH
LATCH
To each block
WRITE ADDRESS
COMPARATOR
ADDRESS
LATCH/
COLUMN DECODER
CELL ARRAY
MEMORY
BANK #0
QS
DS
BANK #1
BANK #2
BANK #3
TC59LM818DMBI-37
BUFFER
READ
DATA
2005-03-07 3/55
DQ BUFFER
DQ0~DQ17
Rev 1.2
BUFFER
WRITE
DATA