IDT82V3355TF IDT, Integrated Device Technology Inc, IDT82V3355TF Datasheet - Page 112
IDT82V3355TF
Manufacturer Part Number
IDT82V3355TF
Description
Manufacturer
IDT, Integrated Device Technology Inc
Datasheet
1.IDT82V3355TF.pdf
(135 pages)
Specifications of IDT82V3355TF
Function
Wan PLL
Operating Temperature (max)
85C
Operating Temperature (min)
-40C
Package Type
TQFP
Pin Count
64
Mounting
Surface Mount
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IDT82V3355TFG
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Company:
Part Number:
IDT82V3355TFG8
Manufacturer:
IDT, Integrated Device Technology Inc
Quantity:
10 000
Table 36: Power Consumption and Maximum Junction Temperature
7
+85°C. To ensure the functionality and reliability of the device, the maxi-
mum junction temperature T
applications, the device will consume more power and a thermal solution
should be provided to ensure the junction temperature T
exceed the T
7.1
geographical center of the chip where the device's electrical circuits are.
It can be calculated as follows:
be used. The θ
in the loads.
ments.
7.2
Table 37: Thermal Data
Thermal Management
IDT82V3355
TQFP/EDG64
LQFP/PP64
The device operates over the industry temperature range -40°C ~
Junction temperature T
Where:
In order to calculate junction temperature, an appropriate θ
Power consumption is the core power excluding the power dissipated
Package
Assume:
TQFP/EDG64
TQFP/EDG64
LQFP/PP64
Package
Equation 1: T
θ
T
T
P = Device Power Consumption
T
θ
s)
P = 1.57W
A
A
JA
j
JA
= Junction Temperature
= 85°C
= Ambient Temperature
= 21.7°C/W (TQFP/EDG64 Soldered & when airfow rate is 0 m/
= Junction-to-Ambient Thermal Resistance of the Package
THERMAL MANAGEMENT
JUNCTION TEMPERATURE
EXAMPLE OF JUNCTION TEMPERATURE
CALCULATION
jmax
Table 36
JA
Consumption (W)
.
is shown in
Pin Count Thermal Pad
j
Power
= T
1.57
1.57
provides power consumption in special environ-
64
64
64
A
+ P X
j
is the temperature of package typically at the
jmax
Table
θ
Yes/Soldered
Yes/Exposed
JA
should not exceed 125°C. In some
Operating
37:
Voltage
No
(V)
3.6
3.6
T
A
θ
85
85
(°C)
JC
12.3
12.6
12.6
(°C/W)
Temperature (°C)
Maximum
Junction
j
125
125
does not
JA
θ
JB
must
35.1
35.3
1.3
(°C/W)
112
temperature of 125°C so no extra heat enhancement is required.
might exceed the maximum junction temperature of 125°C and an exter-
nal thermal solution such as a heatsink is required.
7.3
attached. θ
resistance, as the heat flowing from the die junction to ambient goes
through the package and the heatsink. θ
be selected to ensure the junction temperature does not exceed the
maximum junction temperature. According to Equation 1 and 2,
below or equal to 12.9°C/W is used in such operation environment, the
junction temperature will not exceed the maximum junction temperature.
The junction temperature T
The junction temperature of 119.1°C is below the maximum junction
In some operation environments, the calculated junction temperature
A heatsink is expanding the surface area of the device to which it is
Where:
θ
Assume:
θ
That is, if a heatsink and heatsink attachment whose θ
θ
CH
CH
CH
43.1
37.0
21.7
+ θ
+ θ
0
T
Equation 2:
θ
θ
θ
Equation 3:
T
T
P = 1.57W
θ
θ
+ θ
A
j
JC
CH
HA
j
JC
CH
= T
= 125°C (T
HA
= 85°C
HA
HA
JA
+
= Junction-to-Case Thermal Resistance
= 12.6°C/W (TQFP/EDG64)
= Case-to-Heatsink Thermal Resistance
= Heatsink-to-Ambient Thermal Resistance
HEATSINK EVALUATION
A
θ
can be calculated as follows:
is now a combination of device case and heat-sink thermal
determines which heatsink and heatsink attachment can
can be calculated as follows:
+ P X
HA
32.1
17.3
= (125°C - 85°C ) / 1.57W - 12.6°C/W = 12.9°C/W
40
1
θ
θ
jmax
θ
JA
CH
JA
+
=
)
= 85°C + 1.57W X 21.7°C/W = 119.1°C
θ
θ
θ
JA
HA
JC
SYNCHRONOUS ETHERNET WAN PLL
(°C/W) Air Flow in m/s
38.1
30.4
16.2
+
= (T
j
2
θ
can be calculated as follows:
CH
j
- T
+
A
θ
) / P -
HA
JA
37.3
29.4
15.6
3
θ
can be calculated as follows:
JC
36.5
28.7
15.2
4
May 19, 2009
CH
+
36.1
28.1
14.9
θ
5
HA
is