EPM570F256I5N Altera, EPM570F256I5N Datasheet - Page 55
![IC MAX II CPLD 570 LE 256-FBGA](/photos/6/70/67063/544-256-fbga_sml.jpg)
EPM570F256I5N
Manufacturer Part Number
EPM570F256I5N
Description
IC MAX II CPLD 570 LE 256-FBGA
Manufacturer
Altera
Series
MAX® IIr
Specifications of EPM570F256I5N
Programmable Type
In System Programmable
Delay Time Tpd(1) Max
5.4ns
Voltage Supply - Internal
2.5V, 3.3V
Number Of Logic Elements/blocks
570
Number Of Macrocells
440
Number Of I /o
160
Operating Temperature
-40°C ~ 100°C
Mounting Type
Surface Mount
Package / Case
256-FBGA
Voltage
2.5V, 3.3V
Memory Type
FLASH
Number Of Logic Elements/cells
570
Family Name
MAX II
# Macrocells
440
Frequency (max)
1.8797GHz
Propagation Delay Time
8.7ns
Number Of Logic Blocks/elements
57
# I/os (max)
160
Operating Supply Voltage (typ)
2.5/3.3V
In System Programmable
Yes
Operating Supply Voltage (min)
2.375V
Operating Supply Voltage (max)
3.6V
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
256
Package Type
FBGA
No. Of I/o's
160
Propagation Delay
8.7ns
Global Clock Setup Time
1.9ns
Frequency
201.1MHz
Supply Voltage Range
2.375V To 2.625V, 3V To 3.6V
Operating Temperature Range
-40°C To +100°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
-
Lead Free Status / Rohs Status
Compliant
Other names
544-1399
EPM570F256I5N
EPM570F256I5N
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EPM570F256I5N
Manufacturer:
ALTERA
Quantity:
26
Part Number:
EPM570F256I5N
Manufacturer:
ALTERA/阿尔特拉
Quantity:
20 000
Chapter 4: Hot Socketing and Power-On Reset in MAX II Devices
Power-On Reset Circuitry
Figure 4–4. ESD Protection During Negative Voltage Zap
Power-On Reset Circuitry
© October 2008 Altera Corporation
When the I/O pin receives a negative ESD zap at the pin that is less than –0.7 V (0.7 V
is the voltage drop across a diode), the intrinsic
P-Substrate/N+ drain diode is forward biased. Therefore, the discharge ESD current
path is from GND to the I/O pin, as shown in
MAX II devices have POR circuits to monitor V
power-up. The POR circuit monitors these voltages, triggering download from the
non-volatile configuration flash memory (CFM) block to the SRAM logic, maintaining
tri-state of the I/O pins (with weak pull-up resistors enabled) before and during this
process. When the MAX II device enters user mode, the POR circuit releases the I/O
pins to user functionality. The POR circuit of the MAX II (except MAX IIZ) device
continues to monitor the V
POR circuit of the MAX IIZ device does not monitor the V
device enters into user mode. More details are provided in the following sub-sections.
I/O
GND
Source
Drain
Drain
Source
CCINT
PMOS
NMOS
voltage level to detect a brown-out condition. The
Gate
Gate
P-Substrate
Figure
CCINT
N+
N+
and V
D
S
4–4.
GND
I/O
G
CCIO
CCINT
voltage levels during
voltage level after the
MAX II Device Handbook
4–5