VMM1500-0075X2 IXYS, VMM1500-0075X2 Datasheet - Page 4
![MOSFET & Power Driver ICs Dual Pwr Mosfet Mod 75V 1450A](/photos/33/27/332792/din970_sml.jpg)
VMM1500-0075X2
Manufacturer Part Number
VMM1500-0075X2
Description
MOSFET & Power Driver ICs Dual Pwr Mosfet Mod 75V 1450A
Manufacturer
IXYS
Type
Dual Power MOSFET Driverr
Datasheet
1.VMM1500-0075X2.pdf
(5 pages)
Specifications of VMM1500-0075X2
Product
MOSFET Gate Drivers
Rise Time
1680 ns
Fall Time
880 ns
Maximum Operating Temperature
+ 125 C
Mounting Style
Screw
Package / Case
DIN-970
Maximum Turn-off Delay Time
520 ns
Maximum Turn-on Delay Time
260 ns
Minimum Operating Temperature
- 40 C
Number Of Drivers
2
Number Of Outputs
4
Output Current
500 A
Output Voltage
75 V
Vdss, Max, (v)
75
Id25, Tc = 25°c, (a)
1560
Rds(on), Max, Tj = 25°c, (ohms)
0.38
Ciss, Typ, (pf)
115
Qg, Typ, (nc)
1950
Tf, Typ, (ns)
880
Tr, Typ, (ns)
1680
Pd, (w)
-
Rthjc, Max, (c/w)
0.08
Package Style
Y3-Li (low inductance)
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
© 2010 IXYS All rights reserved
E
V
E
[V]
GS
on
on
[mJ]
[mJ]
, E
, E
rec
rec
12
10
10
8
6
4
2
0
4
3
2
1
0
8
6
4
2
0
0
0
0
Fig. 7
Fig. 9 Typ. turn-on energy and switching times
Fig. 11 Typ. turn-on energy and switching times
10x E
E
V
I
T
R
V
V
T
on
E
G
I
V
V
T
VJ
DS
VJ
G
DS
GS
D
on
VJ
DS
GS
= 25°C
= 10 mA
= 125°C
= 37 V
rec(off)
200
= 1200 A
=
= 1.8 Ω
= 0/10 V
= 125°C
=
= 0/10 V
versus drain current, inductive switching
400
2
Gate charge characteristics
versus gate resistor, inductive switching
37 V
37 V
400
10x
4
800
E
Q
rec(on)
R
G
600
I
G
D
[nC]
[Ω]
[A]
6
1200
800
1000
8
1600
t
t
t
d(on)
r
d(on)
t
1200
r
10
2400
2000
1600
1200
800
400
0
1600
1200
800
400
0
[ns]
[ns]
t
t
[A]
I
[mJ]
D
[mJ]
E
E
off
off
2000
1600
1200
800
400
100
80
60
40
20
80
60
40
20
0
0
0
-40
0
0
Fig. 8
Fig. 10 Typ. turn-off energy and switching times
Fig. 12 Typ. turn-off energy and switching times
R
V
V
T
E
DS
GS
VJ
off
G
I
V
V
T
D
E
VJ
DS
GS
= 125°C
=
= 0/10 V
= 1.8 Ω
off
= 1200 A
200
= 125°C
=
= 0/10 V
0
2
37 V
Drain current I
versus drain current, inductive switching
versus gate resistor, inductive switching
37 V
400
40
4
T
R
I
VMM 1500-0075X2
C
D
600
G
80
[°C]
[A]
[Ω]
D
versus case temperature T
6
120
800
1000
8
160
t
d(off)
t
t
d(off)
f
1200
200
t
10
r
800
600
400
200
0
2500
2000
1500
1000
500
0
20100629a
[ns]
[ns]
4 - 5
t
t
C