VMM1500-0075X2 IXYS, VMM1500-0075X2 Datasheet - Page 5

• Manufacturer Part Number: VMM1500-0075X2
• Description: MOSFET & Power Driver ICs Dual Pwr Mosfet Mod 75V 1450A
• Manufacturer: IXYS
• Type: Dual Power MOSFET Driverr

Specifications of VMM1500-0075X2

• Product: MOSFET Gate Drivers
• Rise Time: 1680 ns
• Fall Time: 880 ns
• Maximum Operating Temperature: + 125 C
• Mounting Style: Screw
• Package / Case: DIN-970
• Maximum Turn-off Delay Time: 520 ns
• Maximum Turn-on Delay Time: 260 ns
• Minimum Operating Temperature: - 40 C
• Number Of Drivers: 2
• Number Of Outputs: 4
• Output Current: 500 A
• Output Voltage: 75 V
• Vdss, Max, (v): 75
• Id25, Tc = 25°c, (a): 1560
• Rds(on), Max, Tj = 25°c, (ohms): 0.38
• Ciss, Typ, (pf): 115
• Qg, Typ, (nc): 1950
• Tf, Typ, (ns): 880
• Tr, Typ, (ns): 1680
• Pd, (w): -
• Rthjc, Max, (c/w): 0.08
• Package Style: Y3-Li (low inductance)
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

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[ns]
[A]
I
t
RM
rr
160
140
120
100
60
40
20
80
V
V
I
0
D
300
400
GS
DS
Fig. 13 Reverse recovery current I
Fig. 15 Reverse recovery time t
Fig. 17 Definition of switching times
0.1 I
0.1 V
V
I
T
V
I
T
F
t
D
VJ
d(on)
VJ
R
R
= 1200 A
= 1200 A
=
= 37 V
= 125°C
= 125°C
D
400
0.9 I
GS
500
37 V
of the body diode vs. di/dt
of the body diode vs. di/dt
t
r
D
500
di
di
F
F
/dt [A/µs]
/dt [A/µs]
600
600
700
700
rr
RM
0.9 V
t
d(off)
800
800
GS
0.9 I
t
f
0.1 I
D
D
t
t
[K/W]
R
thJH
[µC]
[A]
Q
I
S
rr
1200
1000
0.10
0.08
0.06
0.04
0.02
0.00
800
600
400
200
6
5
4
3
2
1
0
0
300
0.0
1
Fig. 14 Reverse recovery charge Q
Fig. 16 Source current I
Fig. 18 Typ. transient thermal impedance
V
I
T
D
VJ
R
0.2
= 1200 A
= 37 V
= 125°C
400
of the body diode vs. di/dt
voltage V
10
VMM 1500-0075X2
0.4
500
di
F
V
SD
t [ms]
/dt [A/µs]
100
SD
0.6
(body diode)
[V]
600
S
vs. source drain
0.8
1000
700
1.0
rr
10000
20100629a
800
1.2
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