PI2EQX5804CNJE Pericom Semiconductor, PI2EQX5804CNJE Datasheet - Page 10

• Manufacturer Part Number: PI2EQX5804CNJE
• Description: IC PCI-E REDRIVER 100LBGA
• Manufacturer: Pericom Semiconductor
• Series: ReDriver™r
• Type: Redriverr

Specifications of PI2EQX5804CNJE

• Tx/rx Type: CML
• Capacitance - Input: 50pF
• Voltage - Supply: 1.15 V ~ 1.25 V
• Current - Supply: 800mA
• Mounting Type: Surface Mount
• Package / Case: 100-LBGA
• Operating Temperature (min): 0C
• Operating Temperature Classification: Commercial
• Operating Temperature (max): 70C
• Rad Hardened: No
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Delay Time: -
• Lead Free Status / Rohs Status: Details

THE MOS-FET’S.
The requirements for the most important characteristics of the MOS-FET’s, used as bi-directional level shifter.
Type : N-channel enhancement mode MOS-FET.
Gate threshold voltage : VGS(th) min. 0.8V max. 1.5V
On resistance : RDS(on) max. 30 Ohm @ ID= 3mA, VGS= 2.5V
Input capacitance : Ciss max. 50 pF @ VDS= 1V, VGS = 0V
Switching times : ton toff max. 50 ns.
Allowed drain current : ID 30 mA or higher.
MOS-FET’s in table 1 are suitable to be used as level shifter. The 2SK3018 are low cost devices and have
good properties for 1.2V/3.3V level shifting, isolation and protection.
Manufacturer
Part Number
2SK3018T106
VDD1= 1.2V
09-0001
PI2EQX5804C
“Lower voltage” section
Manufac-
turer
Rohm
4.7k
27k
Figure 2. Bi-directional Level Shifter Circuit
PI2EQX5804C
4.7k
Drain to
Source Volt-
age (Vds)
30V
10k
s
g
T1
Vbias = 2.4V
s
Current - Con-
tinuous Drain
(Id) @ 25° C
100mA
d
VDD2= 3.3 V
g
2SK3018
T2
10
d
100nf
“Higher voltage” section
2SK3018
5.0Gbps 4-Lane PCIe® 2.0 ReDriver™ with
Input Capac-
itance (Ciss)
@ Vds
13pF @ 5V
10k
10k
Equalization & Emphasis
Gate
threshold
voltage
0.8~1.5V
@100
to I2C controller
μ
A
VDD2= 3.3 V
PS8926B
PI2EQX5804C
SDA
SCL
Package /
Case
SOT-23
2
2
06/08/09