MT48H16M16LFBF-6:H Micron Technology Inc, MT48H16M16LFBF-6:H Datasheet - Page 62

• Manufacturer Part Number: MT48H16M16LFBF-6:H
• Description: IC SDRAM 256MBIT 167MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT48H16M16LFBF-6:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 33: WRITE – Continuous Page Burst
Command
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. J 09/10 EN
BA0, BA1
Address
DQM
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
Bank
T0
Row
Row
t CKH
t CMH
t AH
t AH
t AH
t RCD
Notes:
t CL
T1
NOP
t CH
1.
2. Page left open; no
t
WR must be satisfied prior to issuing a PRECHARGE command.
t CMS
t CK
t DS
Column m
D
WRITE
T2
Bank
IN
t CMH
m
t DH
t DS
D
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
IN
T3
t
NOP
RP.
m + 1
t DH
62
t DS
D
IN
T4
NOP
m + 2
All locations within same row
t DH
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Full page completed
t DS
D
IN
T5
NOP
m + 3
t DH
(
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t DS
Tn + 1
D
IN
NOP
m - 1
© 2008 Micron Technology, Inc. All rights reserved.
Full-page burst
does not self-terminate.
Use BURST TERMINATE
command to stop. 1, 2
t DH
WRITE Operation
BURST TERM
Tn + 2
Don’t Care
Tn + 3
NOP