MT48H16M16LFBF-6:H Micron Technology Inc, MT48H16M16LFBF-6:H Datasheet - Page 63

• Manufacturer Part Number: MT48H16M16LFBF-6:H
• Description: IC SDRAM 256MBIT 167MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT48H16M16LFBF-6:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 34: WRITE – DQM Operation
Burst Read/Single Write
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. J 09/10 EN
Command
BA0, BA1
Address
DQM
CKE
CLK
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
Bank
T0
Row
Row
t CKH
t CMH
t AH
t AH
t AH
Note:
t RCD
t CK
The burst read/single write mode is entered by programming the write burst mode bit
(M9) in the mode register to a 1. In this mode, all WRITE commands result in the access
of a single column location (burst of one), regardless of the programmed burst length.
READ commands access columns according to the programmed burst length and se-
quence, just as in the normal mode of operation (M9 = 0).
T1
NOP
1. For this example, BL = 4.
Disable auto precharge
Enable auto precharge
t CMS
t CL
t DS
Column m
WRITE
D
T2
Bank
IN
t CMH
t DH
m
t CH
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
T3
NOP
63
t DS
D
IN
T4
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
m + 2
t DH
t DS
D
IN
T5
NOP
m + 3
t DH
© 2008 Micron Technology, Inc. All rights reserved.
NOP
T6
WRITE Operation
NOP
T7
Don’t Care