MT48H16M16LFBF-6:H Micron Technology Inc, MT48H16M16LFBF-6:H Datasheet - Page 71

• Manufacturer Part Number: MT48H16M16LFBF-6:H
• Description: IC SDRAM 256MBIT 167MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT48H16M16LFBF-6:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 41: WRITE With Auto Precharge Interrupted by a READ
Figure 42: WRITE With Auto Precharge Interrupted by a WRITE
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. J 09/10 EN
Internal
States
Internal
States
Command
Command
Note:
Note:
Address
Address
Bank m
Bank m
Bank n
Bank n
CLK
CLK
DQ
DQ
1. DQM is LOW.
1. DQM is LOW.
Page active
Page active
NOP
T0
T0
NOP
WRITE - AP
WRITE - AP
Page active
Bank n,
Page active
Bank n,
Bank n
Bank n
Col a
T1
D
T1
Col a
D
a
a
IN
IN
WRITE with burst of 4
WRITE with burst of 4
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
T2
a + 1
T2
a + 1
NOP
D
NOP
D
IN
IN
71
READ - AP
Bank m,
T3
T3
a + 2
Col d
Bank m
D
NOP
IN
Interrupt burst, write-back
t
WR - bank n
READ with burst of 4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
WRITE - AP
Bank m,
Col d
T4
Bank m
T4
D
NOP
CL = 3 (bank m)
t
d
Interrupt burst, write-back
WR - bank n
IN
WRITE with burst of 4
T5
T5
d + 1
NOP
NOP
D
t
IN
Precharge
RP - bank n
PRECHARGE Operation
T6
T6
NOP
D
d + 2
NOP
D
OUT
t RP - bank n
d
Precharge
IN
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Don’t Care
Don’t Care
T7
T7
D
d + 1
NOP
d + 3
NOP
D
t WR - bank m
OUT
t RP - bank m
IN
Write-back