MT48H16M16LFBF-6:H Micron Technology Inc, MT48H16M16LFBF-6:H Datasheet - Page 81
MT48H16M16LFBF-6:H
Manufacturer Part Number
MT48H16M16LFBF-6:H
Description
IC SDRAM 256MBIT 167MHZ 54VFBGA
Manufacturer
Micron Technology Inc
Series
-r
Datasheet
1.MT48H16M16LFBF-6H.pdf
(86 pages)
Specifications of MT48H16M16LFBF-6:H
Format - Memory
RAM
Memory Type
Mobile SDRAM
Memory Size
256M (16Mx16)
Speed
166MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.95 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-VFBGA
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT48H16M16LFBF-6:H
Manufacturer:
Micron Technology Inc
Quantity:
10 000
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Deep Power-Down
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. J 09/10 EN
Deep power-down mode is a maximum power-saving feature achieved by shutting off
the power to the entire device memory array. Data on the memory array will not be re-
tained after deep power-down mode is executed. Deep power-down mode is entered by
having all banks idle, with CS# and WE# held LOW with RAS# and CAS# HIGH at the
rising edge of the clock, while CKE is LOW. CKE must be held LOW during deep power-
down.
To exit deep power-down mode, CKE must be asserted HIGH. Upon exiting deep power-
down mode, a full initialization sequence is required.
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
81
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
Deep Power-Down
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