MT48H16M16LFBF-6:H Micron Technology Inc, MT48H16M16LFBF-6:H Datasheet - Page 81

• Manufacturer Part Number: MT48H16M16LFBF-6:H
• Description: IC SDRAM 256MBIT 167MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Series: -r

Specifications of MT48H16M16LFBF-6:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Deep Power-Down
PDF: 09005aef834c13d2
256mb_mobile_sdram_y36n.pdf - Rev. J 09/10 EN
Deep power-down mode is a maximum power-saving feature achieved by shutting off
the power to the entire device memory array. Data on the memory array will not be re-
tained after deep power-down mode is executed. Deep power-down mode is entered by
having all banks idle, with CS# and WE# held LOW with RAS# and CAS# HIGH at the
rising edge of the clock, while CKE is LOW. CKE must be held LOW during deep power-
down.
To exit deep power-down mode, CKE must be asserted HIGH. Upon exiting deep power-
down mode, a full initialization sequence is required.
256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2008 Micron Technology, Inc. All rights reserved.
Deep Power-Down