NX3L1G53GT,115 NXP Semiconductors, NX3L1G53GT,115 Datasheet - Page 14

• Manufacturer Part Number: NX3L1G53GT,115
• Description: IC SWITCH SPDT 8XSON
• Manufacturer: NXP Semiconductors

Specifications of NX3L1G53GT,115

• Package / Case: 8-XFDFN
• Function: Switch
• Circuit: 1 x SPDT
• On-state Resistance: 500 mOhm
• Voltage Supply Source: Single Supply
• Voltage - Supply, Single/dual (±): 1.4 V ~ 4.3 V
• Current - Supply: 150nA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Switch Configuration: SPDT
• On Resistance (max): 1.6 Ohm (Typ) @ 1.4 V
• On Time (max): 42 ns @ 1.6 V
• Off Time (max): 19 ns @ 1.6 V
• Supply Voltage (max): 4.3 V
• Supply Voltage (min): 1.4 V
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4644-2; 935285822115; NX3L1G53GT-G

NXP Semiconductors
Table 11.
Table 12.
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); V
specified); t
[1]
NX3L1G53_4
Product data sheet
Supply voltage
V
1.4 V to 4.3 V
Symbol Parameter
THD
f
α
V
Xtalk
Q
(−3dB)
iso
CC
ct
inj
f
i
is biased at 0.5V
total harmonic
distortion
−3 dB frequency
response
isolation (OFF-state)
crosstalk voltage
crosstalk
charge injection
r
Test data
Additional dynamic characteristics
= t
f
≤
12.2 Additional dynamic characteristics
2.5 ns; T
CC
.
amb
= 25
Conditions
f
R
f
between digital inputs and switch;
f
between switches;
f
f
R
°
i
i
i
i
i
C.
= 20 Hz to 20 kHz; R
L
= 100 kHz; R
= 1 MHz; C
= 100 kHz; R
= 1 MHz; C
gen
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
= 50 Ω; see
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
= 0 Ω; see
= 1.4 V; V
= 1.65 V; V
= 2.3 V; V
= 2.7 V; V
= 4.3 V; V
= 1.4 V to 4.3 V
= 1.4 V to 4.3 V
= 1.4 V to 3.6 V
= 3.6 V to 4.3 V
= 1.4 V to 4.3 V
= 1.5 V
= 1.8 V
= 2.5 V
= 3.3 V
= 4.3 V
Input
V
V
I
CC
L
L
Rev. 04 — 27 January 2010
= 50 pF; R
= 0.1 nF; R
L
L
Figure 20
Figure 24
= 50 Ω; see
= 50 Ω; see
I
I
I
I
= 1 V (p-p)
= 1.5 V (p-p)
= 2 V (p-p)
= 2 V (p-p)
I
= 1.2 V (p-p)
L
= 32 Ω; see
L
L
= 50 Ω; see
= 1 MΩ; V
Low-ohmic single-pole double-throw analog switch
t
≤ 2.5 ns
Figure 21
Figure 23
r
, t
f
Figure 19
gen
Figure 22
= 0 V;
Load
C
35 pF
L
I
= GND or V
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NX3L1G53
CC
Typ
0.15
0.10
0.02
0.02
0.02
© NXP B.V. 2010. All rights reserved.
−90
−90
0.2
0.3
60
15
R
50 Ω
(unless otherwise
3
4
6
9
L
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
14 of 23
Unit
MHz
pC
pC
pC
pC
pC
dB
dB
%
%
%
%
%
V
V