NX3L1G53GT,115 NXP Semiconductors, NX3L1G53GT,115 Datasheet - Page 17

• Manufacturer Part Number: NX3L1G53GT,115
• Description: IC SWITCH SPDT 8XSON
• Manufacturer: NXP Semiconductors

Specifications of NX3L1G53GT,115

• Package / Case: 8-XFDFN
• Function: Switch
• Circuit: 1 x SPDT
• On-state Resistance: 500 mOhm
• Voltage Supply Source: Single Supply
• Voltage - Supply, Single/dual (±): 1.4 V ~ 4.3 V
• Current - Supply: 150nA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Switch Configuration: SPDT
• On Resistance (max): 1.6 Ohm (Typ) @ 1.4 V
• On Time (max): 42 ns @ 1.6 V
• Off Time (max): 19 ns @ 1.6 V
• Supply Voltage (max): 4.3 V
• Supply Voltage (min): 1.4 V
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4644-2; 935285822115; NX3L1G53GT-G

NXP Semiconductors
NX3L1G53_4
Product data sheet
Fig 24. Test circuit for measuring charge injection
a. Test circuit
b. Input and output pulse definitions
Q
ΔV
R
V
V
gen
gen
I
inj
may be connected to S or E.
O
= ΔV
= output voltage variation.
= generator voltage.
= generator resistance.
O
× C
L
.
logic input
V
V
IL
I
(S, E)
G
V
O
V
O
off
Rev. 04 — 27 January 2010
R L
C L
S
Z
Low-ohmic single-pole double-throw analog switch
E
on
V
CC
GND
Y0
Y1
1
2
switch
off
001aad398
001aah451
R gen
ΔV
V gen
O
NX3L1G53
© NXP B.V. 2010. All rights reserved.
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