NX3L1G53GT,115 NXP Semiconductors, NX3L1G53GT,115 Datasheet - Page 21

IC SWITCH SPDT 8XSON

NX3L1G53GT,115

Manufacturer Part Number
NX3L1G53GT,115
Description
IC SWITCH SPDT 8XSON
Manufacturer
NXP Semiconductors
Datasheet

Specifications of NX3L1G53GT,115

Package / Case
8-XFDFN
Function
Switch
Circuit
1 x SPDT
On-state Resistance
500 mOhm
Voltage Supply Source
Single Supply
Voltage - Supply, Single/dual (±)
1.4 V ~ 4.3 V
Current - Supply
150nA
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Switch Configuration
SPDT
On Resistance (max)
1.6 Ohm (Typ) @ 1.4 V
On Time (max)
42 ns @ 1.6 V
Off Time (max)
19 ns @ 1.6 V
Supply Voltage (max)
4.3 V
Supply Voltage (min)
1.4 V
Maximum Power Dissipation
250 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4644-2
935285822115
NX3L1G53GT-G
NXP Semiconductors
14. Abbreviations
Table 13.
15. Revision history
Table 14.
NX3L1G53_4
Product data sheet
Acronym
CDM
CMOS
ESD
HBM
MM
TTL
Document ID
NX3L1G53_4
Modifications:
NX3L1G53_3
NX3L1G53_2
NX3L1G53_1
Abbreviations
Revision history
Description
Charged Device Model
Complementary Metal Oxide Semiconductor
ElectroStatic Discharge
Human Body Model
Machine Model
Transistor-Transistor Logic
Release date
20100127
20090417
20080718
20080408
Section
Table
8: ON resistance (flattness) changed at V
2: IEC61000-4-2 added.
Data sheet status
Product data sheet
Product data sheet
Product data sheet
Product data sheet
Rev. 04 — 27 January 2010
Low-ohmic single-pole double-throw analog switch
Change notice
-
-
-
-
CC
= 4.3 V.
Supersedes
NX3L1G53_3
NX3L1G53_2
NX3L1G53_1
-
NX3L1G53
© NXP B.V. 2010. All rights reserved.
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